CdTe and CdZnTe detectors for timing measurements

Okada, Y.; Takahashi, Tadayuki; Sato, G.; Watanabe, Shin; Nakazawa, K.; Mori, Kunishiro; Makishima, Kazuo

doi:10.1109/tns.2002.801709

Cited by 24 publications

(10 citation statements)

References 13 publications

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“…Typical pulse durations are found to be 12nsec for lower and 6nsec for higher electric field strength. These FWHM of pulse durations are in good agreement to measurements on CdTe and CZT detectors [34].…”

Section: Influence Of Applied Electric Fieldsupporting

confidence: 88%

CdTe/CZT under high flux irradiation

Straßburg¹,

Schroeter²,

Hackenschmied³

2011

J. Inst.

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Direct converting quantum counting detectors based on cadmium telluride and cadmium zinc telluride have been investigated with respect to their properties under intense X-ray irradiation. To derive a detailed picture of the performance of such detectors, the influence of the electric field, the detector thickness, the temperature and the intensity of the X-ray irradiation was studied. The results are discussed in terms of the "polarization" phenomenon, a reduction of the electric field strength inside the detector due to immobile charge carriers accumulating during irradiation. Furthermore, the impact of Te-inclusions and -precipitates is presented.

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Section: Influence Of Applied Electric Fieldsupporting

confidence: 88%

CdTe/CZT under high flux irradiation

Straßburg¹,

Schroeter²,

Hackenschmied³

2011

J. Inst.

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“…A good time resolution is required to reject random events thus reducing noise in the reconstructed PET images. The reported time resolutions at room temperature are about 10 ns (FWHM) (Baldazzi et al 1993, Giboni et al 2000, Okada et al 2002, Vaska et al 2005, Nakhostin et al 2009 which is 2-3 times larger than that for slow scintillator detectors such as NaI(Tl) and BGO. Moreover, the spectroscopic performance of compound semiconductor detectors is still limited by the charge-trapping effect (Eisen et al 1999).…”

Section: Introductionmentioning

confidence: 97%

Optimizing timing performance of CdTe detectors for PET

Nakhostin¹

2017

Phys. Med. Biol.

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Despite several attractive properties, the poor timing performance of compound semiconductor detectors such as CdTe and CdZnTe has hindered their use in commercial PET imaging systems. The standard method of pulse timing with such detectors is to employ a constant-fraction discriminator at the output of a timing filter which is fed by the pulses from a charge-sensitive preamplifier. The method has led to a time resolution of about 10 ns at full-width at half-maximum (FWHM) with 1 mm thick CdTe detectors. This paper presents a detailed investigation on the parameters limiting the timing performance of Ohmic contact planar CdTe detectors with the standard pulse timing method. The jitter and time-walk errors are studied through simulation and experimental measurements and it is revealed that the best timing results obtained with the standard timing method suffer from a significant loss of coincidence events (~50%). In order to improve the performance of the detectors with full detection efficiency, a new digital pulse timing method based on a simple pattern recognition technique was developed. A time resolution of 3.29 ± 0.10 ns (FWHM) in the energy range of 300-650 keV was achieved with an Ohmic contact planar CdTe detector (5 × 5 × 1 mm). The digital pulse processing method was also used to correct for the charge-trapping effect and an improvement in the energy resolution from 4.83 ± 0.66% to 2.780 ± 0.002% (FWHM) at 511 keV was achieved. Further improvement of time resolution through a moderate cooling of the detector and the application of the method to other detector structures are also discussed.

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“…There have been a few studies of exploring the temporal response of CZT detec-tors. For instance, 241 Am α-γ coincidence [6] and high energy pulsed x-ray photons [7] have been utilized to investigate the temporal properties of CZT detectors. These measurements suggested that CZT has a time resolution on the order of a few nanoseconds and can be improved by using digital signal processing.…”

Section: Introductionmentioning

confidence: 99%

Temporal pulsed x-ray response of CdZnTe: In detector

Guo¹,

Ye²,

Zha³

et al. 2018

Chinese Phys. B

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The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×10 9 photons mm −2 •s −1 . Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

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CdTe and CdZnTe detectors for timing measurements

Cited by 24 publications

References 13 publications

CdTe/CZT under high flux irradiation

CdTe/CZT under high flux irradiation

Optimizing timing performance of CdTe detectors for PET

Temporal pulsed x-ray response of CdZnTe: In detector

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