CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

Vogt, A.; Schütt, Sebastian; Frei, Kathrin; Fiederle, M.

doi:10.1016/j.jcrysgro.2017.02.048

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…1 Its excellent absorption coefficient due to high mean Z-number and high density, as well as the low electron-hole pair creation energy, make this material ideal for development of high efficiency detection systems. 2 Since CdTe has high RT resistivity and a wide 1.5 eV band gap, this material has low leakage current and, consequently, good RT performance. In particular, CdTe detectors with Schottky barriers show favorable spectrometric properties even at higher bias voltages applied during detector operation.…”

Section: Introductionmentioning

confidence: 99%

Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

Sedlačková

Затько

Pavlovič

et al. 2020

Int. J. Mod. Phys. Conf. Ser.

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High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

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Section: Introductionmentioning

confidence: 99%

Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

Sedlačková

Затько

Pavlovič

et al. 2020

Int. J. Mod. Phys. Conf. Ser.

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“…[ 1 ] Limited detector performances of the current radiation sensors (e.g., GaAs, (Cd,Zn)Te, Si, Ge) [ 2 ] drive the need to improve their quality and electrical properties. [ 3,4 ] A viable alternative is to identify semiconductor materials that can be synthesised by low‐cost, facile crystal growth methods, while still satisfying the requirements for direct conversion of sensors operating at room temperature. Competitive nature of the hybrid methylammonium lead halide perovskite material stems not only from its low‐cost, low‐temperature solution synthesis, but also from its high absorbance (X‐ and γ‐ray region of the spectrum) and photoconductivity.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Radiation Sensors Based on Single Crystals of Hybrid Metal–Organic Methylammonium Lead Bromide and Iodide Perovskite

Murgulov

Daub

Hillebrecht

et al. 2020

Crystal Research and Technology

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The inverse temperature (T)‐dependent methods yield single crystals of methylammonium lead halide perovskite with strained lattices. In contrast, the antisolvent diffusion method (antisolvent‐vapor crystallization (AVC)) produces unstrained MAPbBr3 crystals with more uniform growth features and lower density of defects. The powder X‐ray diffraction (XRD) measurements confirm the cubic and the tetragonal structure of the MAPbBr3 and the MAPbI3 samples, respectively. The XRD pole figure measurements (MAPbBr3) reveal a roughly parallel dominant (100) lattice plane to the sample surface. An optimal crystal growth combines growth of a seed on an oriented substrate by the AVC method followed by either the AVC or a T‐dependent method. The estimated resistivity ρ and the density of trap state ntrap values for the MAPbI3 samples are 107 Ωcm and 1010 cm−3, respectively. The X‐ray detection test reveals promising electrical properties of the MAPbI3 material. Results from the Hall measurements in van der Pauw geometry for the MAPbBr3 samples agree with those in the literature: the charge‐carrier concentration of 109−1010 cm−3 and the mobility of 7–289 cm2 V−1 s−1, ntrap of 109−1010 cm−3, and ρ of 107–108 Ωcm. These electrical parameters indicate that the MAPbBr3 samples satisfy requirements for radiation sensors.

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“…[1][2][3][4] CdTe is one of the most promising II-VI semiconductor materials which has seen rapid growth in solar cells because of its high absorption coefficient (>10 4 cm −1 ) 5,6 and ideal bandgap (Eg = 1.37-1.54 eV) 7 for efficient energy conversion. Also, due to its high resistivity, high mean Z-number of 50, 8 and carrier transport properties, 9 it is widely used as a component of X-ray and gamma-ray detectors. [10][11][12] Furthermore, CdTe is unique among II-VI semiconductors as it can exhibit both n-type and p-type conductivity simply by tuning the stoichiometry of the material.…”

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confidence: 99%

Potential Pulse ALD for Room Temperature Fabrication of Stoichiometric CdTe Nanofilms

Zhang

Shen

Howell

et al. 2019

J. Electrochem. Soc.

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Deposition of thin film compound semiconductors with good control over stoichiometry, crystallinity and thickness is essential for a range of diverse applications such as solar cells, photocatalysis, thermoelectrics, photodetectors, etc. In this work, nanometer-thick cadmium telluride (CdTe) films with exceptional control over its stoichiometry were electrodeposited onto Au substrates using a novel potential pulse atomic layer deposition (PP-ALD) process. The films were electrodeposited from an acidic aqueous solution of CdSO4 and TeO2 at room temperature using a flow cell electrodeposition set-up. Deposition potential and effect of solution flow were first investigated to optimize the codeposition process. Potential pulses were then subsequently introduced to achieve atomic layer deposition of CdTe. X-ray diffraction (XRD), Scanning electron microscope (SEM), Electron probe microanalysis (EPMA), Energy Dispersive X-Ray Analyzer (EDX) were used to characterize resulting CdTe films. XRD studies of the films showed the evolution of a much sharper peak corresponding to CdTe cubic (111) than is customarily observed for CdTe thin films grown at room temperature. The optimized PP-ALD method was also used to deposit CdTe on Au nanowire-array electrodes. Initial results show high-quality CdTe deposits conformally coated on Au nanowire arrays, which could open pathways for ultrathin light absorber solar energy conversion devices.

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CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

Cited by 7 publications

References 8 publications

Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

Growth and Characterization of Radiation Sensors Based on Single Crystals of Hybrid Metal–Organic Methylammonium Lead Bromide and Iodide Perovskite

Potential Pulse ALD for Room Temperature Fabrication of Stoichiometric CdTe Nanofilms

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