CdTe stacked detectors for gamma-ray detection

Watanabe, Shin; Takahashi, Tadayuki; Okada, Y.; Sato, Chuichi; Kouda, M.; Mitani, Takefumi; Kobavashi, Y.; Nakazawa, K.; Kuroda, Yoshihiro; Onishi, M.

doi:10.1109/tns.2002.1039654

Cited by 20 publications

(9 citation statements)

References 19 publications

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“…According to the analysis based on Monte Calro detector simulation, we confirmed the contribution of Doppler broadening is 2.6 degree, and the contributions from position resolution and energy resolution are 2.6 degree and 2.7 degree, respectively [29] Additionally, CdTe layers can also be used as scatterer if the energy of incident gamma-rays is high. According to our measurements, the obtained angular resolution is 35.9 degree at 122 keV, and 12.2 degree at 511 keV, which is mainly dominated by the effect of Doppler broadening [31]. When kinetic energy of an electron is above ∼ 250 keV, the range of electrons in silicomn exceeds the thickness of one layer of the DSSD (300 μm).…”

Section: Semiconductor Compton Telescopementioning

confidence: 67%

“…Taking advantage of significant progress in CdTe technology, we are developing a new generation of Compton telescope, the semiconductor Compton telescope [8,22,[29][30][31]. In addition to the low background capability by utilizing the Compton kinematics, it features high spectral resolution (2 keV (FHWM) at 100 keV) and high angular resolution close to the theoretical limit defined by the Doppler broadening.…”

Section: Semiconductor Compton Telescopementioning

confidence: 99%

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A Si/CdTe Compton Camera for gamma-ray lens experiment

Takahashi

2006

Exp Astron

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Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ -ray detection. However, a considerable amount of charge loss in these detectors results in a reduced energy resolution. We have achieved a significant improvement in the spectral properties by forming the Schottky junction on the Te side of the CdTe wafer. With the further reduction of leakage current by an adoption of guard ring structure, we have demonstrated a CdTe pixel detector with high energy resolution and full charge collection capabilty. The detector has a pixel size of a few mm and a thickness of 0.5 − 1 mm. We apply this high resolution detector to a new silicon and CdTe Compton Camera which features high angular resolution. We also describe a concept of the stack detector which consists of many thin CdTe layers and provides sufficient efficiency for hard X-rays and gamma-rays up to several hundred keV maintaining good energy resolution. A narrow-FOV Compton telescope can be realized by installing a Si/CdTe Compton Camera inside the deep well of an active shield. This configuration is very suitable as focal plane detector for future focusing gamma-ray missions.

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Section: Semiconductor Compton Telescopementioning

confidence: 67%

Section: Semiconductor Compton Telescopementioning

confidence: 99%

A Si/CdTe Compton Camera for gamma-ray lens experiment

Takahashi

2006

Exp Astron

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“…In our previous studies, we demonstrated that both good energy resolution and good detection efficiency can be achieved with the CdTe stack detector. These were achieved using planar CdTe diode detectors with a thickness of 0.5 mm [16][17][18]. As the absorber detector of the Compton camera, three-dimensional position detection capabilities are necessary in addition to good energy resolution and good detection efficiency.…”

Section: Cdte Stack Detector As the Absorber Detector For The Comptonmentioning

confidence: 99%

Development of semiconductor imaging detectors for a Si/CdTe Compton camera

Watanabe

Takeda

Ishikawa

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

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Si and CdTe semiconductor imaging detectors have been developed for use in a Si/CdTe Compton camera. Based on a previous study using the first prototype of a Si/CdTe Compton camera, new detector modules have been designed to upgrade the performance of the Compton camera. As the scatter detector of the Compton camera, a stack of double-sided Si strip detector (DSSD) modules, which has four layers with a stack pitch of 2 mm, was constructed. By using the stack DSSDs, an energy resolution of 1.5 keV (FWHM) was achieved. For the absorber detector, the CdTe pixel detector modules were built and a CdTe pixel detector stack using these modules was also constructed. A high energy resolution (DE=E$1%) was achieved. The improvement of the detection efficiency by stacking the modules has been confirmed by tests of the CdTe stack. Additionally, a large area CdTe imager is introduced as one application of the CdTe pixel detector module.

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“…A number of publications reported that employment of such technique increased the detector sensitivity in the high-energy range [7,8,16]. It is apparent that the radiation reaches the second detector being attenuated in conformity with the transmission of the metal electrode and the substrate of the first detector:…”

Section: Stacked Detectormentioning

confidence: 99%

“…4. Calculations were made for a detector with a different number of stacks up to 40 (the 40-stacked detector is reported in [16]). As it was initially assumed, increase in the detection efficiency of the stacked detector is observed only for the photon energy higher than ~100 keV.…”

Section: Stacked Detectormentioning

confidence: 99%

Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

Kosyachenko

Maslyanchuk

2005

phys. stat. sol. (c)

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A study on the efficiency spectrum of CdTe X-and γ-ray detectors utilizing Schottky diodes for different material parameters and diode structures is reported. Special attention is paid to the effect of deep levels and compensation on space-charge region width. It is shown that charge collection in the neutral region of the detector considerably contributes to the device efficiency. Calculations also show that the efficiency of a stacked detector can be higher than that of a bulk detector with ohmic contacts.1 Introduction The effective operation of X-and γ-ray detectors in a spectrometric mode implies full collection of charge generated by the absorbed high-energy photon. It is known that the carrier lifetime in the purest and most perfect CdTe crystals does not exceed several microseconds. Therefore, in order to prevent capture or recombination of carriers, a bias voltage 100-400 V has to be applied to a several millimeters thick semiconductor chip. The high bias voltage imposes another critical requirement to the detector material: the conductivity of the CdTe crystal should be semi-intrinsic, otherwise a considerable dark current will deteriorate the energy resolution of the device.In the late 1990s, the previously proposed idea of using a diode structure in X-and γ-ray detectors [1-4] has undergone further elaboration. The results presented in a number of publications by T. Takahashi et al. [5][6][7] indicated a considerable improvement of a CdTe detector characteristic as a result of employment of an In/p-CdTe Schottky diode. This achievement allowed for manufacturing of high-energy photon CdTe detectors without implementation of any electronic schemes for signal processing [8]. Nevertheless, a number of questions on the Schottky barrier role and material requirements still remain unclarified. The present paper analyzes spectral response of a CdTe detector utilizing a Schottky diode.

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CdTe stacked detectors for gamma-ray detection

Cited by 20 publications

References 19 publications

A Si/CdTe Compton Camera for gamma-ray lens experiment

A Si/CdTe Compton Camera for gamma-ray lens experiment

Development of semiconductor imaging detectors for a Si/CdTe Compton camera

Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

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