Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co3O4 Thin-Film Memristors

“…From the perspective of exploring RS materials, lots of materials have shown RS performance. , However, metal oxides are more favored owing to their stable physical/chemical characteristics, simple preparation, and compatibility with magnetic/optical properties. , Recently, spinel materials have exhibited excellent RS characteristics, such as spinel-structured oxides: NiFe 2 O 4 , CoFe 2 O 4 , ZnFe 2 O 4 , MnCo 2 O 4 , and Co 3 O 4 , − which suggested that the spinel structure of materials owns superiority for RS application. Among them, spinel-structure Co 3 O 4 is an outstanding candidate for RRAM device applications because of the simple binary compositions, friendly compatibility with magnetism, adjustable valence conversion, and good p-type semiconductor properties. , To date, there are relatively few studies of the RS properties of spinel cobalt oxide (Co 3 O 4 ).…”