Cellular growth of single crystals

Miller, W.; Абросимов, Н. В.; Rasin, Igal G.; Borissova, Daniela

doi:10.1016/j.jcrysgro.2007.11.046

Cited by 13 publications

(13 citation statements)

References 14 publications

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“…[11][12][13] Faceting is also observed during the epitaxial growth of SiGe films, 14,15 and cellular structure evolution during the growth of Ge 1Àx Si x single crystals has been investigated by simulations. 16,17 Recently, we have reported the h100i crystal-melt interface morphological transformation from a planar to a zigzag facets to a faceted cellular in Si 0.85 Ge 0.15 crystal and formation mechanism of the cellular structure was clarified. 18 However, the effect of Ge concentration on the crystal-melt interface morphological transformation in SiGe crystal is still unknown.…”

Section: And S Udamentioning

confidence: 99%

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Yang¹,

Fujiwara²,

Абросимов³

et al. 2012

Applied Physics Letters

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Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (Vc) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. Vc for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

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Section: And S Udamentioning

confidence: 99%

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Yang¹,

Fujiwara²,

Абросимов³

et al. 2012

Applied Physics Letters

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“…The constitutional supercooling during the crystal growth, fluctuations of the growth rate due to the melt convection and a deviation of the temperature field from the ideal symmetry cause the instability of the solid‐liquid interface and its wavy form , which can be visualized as striations in the crystal using selective etching. After a short transitional period, the shape of “waves” coincides approximately with the orientation of crystallographic planes {111} in the crystal and the cellular growth starts.…”

Section: Resultsmentioning

confidence: 99%

Evolution of real structure in Ge‐Si mosaic crystals

Borisova

Абросимов

Щербачев

et al. 2016

Crystal Research and Technology

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The structure and properties of Czochralski (Cz)-grown Ge 1-x Si x mosaic crystals were investigated using optical microscopy, atomic force microscopy, X-ray diffraction analysis, microprobe analysis, FTIR and transmission electron microscopy. The role of segregation, form of solidliquid interface and dislocation generation in the development of mosaic structure were analyzed and used for optimization of growth parameters such as Si concentration and growth rate. The dislocation density estimated experimentally was compared with the calculated data. Composition fluctuations caused by formation of cellular structure at the interface lead to a local lattice misorientation that is one of the reasons for crystal mosaicity. Model of mosaic structure generation in terms of dislocation density and composition variations is presented.

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“…The simplest approach to anisotropic growth kinetics is in two dimensions setting a polynomial of cos( θ ) with deep minima in the 11 directions. This approach has been used for the computation of the evolution of cellular structures with similar process parameters as in experiments 64. The experimentally observed evolution can be reproduced qualitatively by this computation (see Fig.…”

Section: Special Application: Czochralski Growth Of Ge1–xsixmentioning

confidence: 86%

“…The evolution of microstructures in two dimensions has been computed by a PF method and a LBM 64. PF models have become common methods for computing the evolution of microstructures numerically and will be discussed below.…”

Section: Special Application: Czochralski Growth Of Ge1–xsixmentioning

confidence: 99%

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Numerical simulations of bulk crystal growth on different scales: silicon and GeSi

Miller

2010

Physica Status Solidi (b)

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Numerical modelling has become an important tool for improving or introducing new processes in bulk crystal growth. For a complete description, scales ranging from atomistic ones up to those of industrial furnaces have to be considered. This article presents methods used on different scales for the Czochralski growth of silicon as well as of Ge1–xSix alloys and for ingot casting of silicon. It shows the recent developments for the different scales and the attempts at coupling the approaches.

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Cellular growth of single crystals

Cited by 13 publications

References 14 publications

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Evolution of real structure in Ge‐Si mosaic crystals

Numerical simulations of bulk crystal growth on different scales: silicon and GeSi

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