Cellular logic architectures for optical computers

Yatagai, Toyohiko

doi:10.1364/ao.25.001571

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1988

1990

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Cited by 43 publications

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Analysis of the operation of surface‐emitting‐type optical threshold device

Nitta

Iga

1988

Electron Comm Jpn Pt II

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This paper proposes a surface‐emitting‐type optical threshold device and analyzes its characteristics. For a surface‐emitting laser resonator with a saturable absorber, its static characteristics and small signal analysis with a current or light injection are obtained from rate equations. As a result, the possibility of an optical threshold device which operates with a practical optical energy of approximately 30 kW/cm2 has been shown. Furthermore, it has been shown that the optical threshold varies by controlling an injection current, and that AND and OR logics are possible with one device. As a result of small signal analysis, the device is shown to have a bandwidth of approximately 1 GHz.

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Analysis of the operation of surface‐emitting‐type optical threshold device

Nitta

Iga

1988

Electron Comm Jpn Pt II

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Pulse operation of GaAs/ALGaAs surface‐emitting laser‐type optical threshold device

Nitta

Koyama

Iga

1989

Electron Comm Jpn Pt II

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This paper describes the fabrication and basic properties and optical property of a GaAs/AlGaAs surface‐emitting laser‐type optical threshold device. Initially, a GaAs/AlGa‐As surface‐emitting optical threshold device with a mesa cap ring electrode structure (active layer of 3 μm and absorption layer of 0.5 μm) was fabricated and it was found that the device had a threshold current of 430 mA under room temperature pulse operation. To confirm whether the absorption layer was effective, the slow pulse response was calculated theoretically. Then, it was confirmed that an asymmetrical optical pulse can be obtained experimentally. Then a nonlinear optical input‐output was obtained at the input optical density of about 100 W/cm2.

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