2019
DOI: 10.1002/inf2.12001
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Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Abstract: Ever since discovery of graphene, two‐dimensional (2D) materials become a new tool box for information technology. Among the 2D family, ultrathin bismuth (Bi) has attracted a great deal of attention in recent years due to its unique topological insulating properties and large magnetoresistance. However, the scalable synthesis of layered Bi ultrathin films is rarely been reported, which would greatly restrict further fundamental investigation and practical device development. Here, we demonstrate the direct gro… Show more

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Cited by 86 publications
(89 citation statements)
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References 55 publications
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“…In early 2019, bismuthene FETs have been successfully fabricated, exhibiting a carrier mobility of 220 cm 2 V −1 s −1 but low switching ratio (<10). The low switching ratio can be explained by the semi‐metal feature of bismuthene or the screening effect of the gate electric field …”
Section: Applications Of 2d V‐v Binary Materialsmentioning
confidence: 99%
“…In early 2019, bismuthene FETs have been successfully fabricated, exhibiting a carrier mobility of 220 cm 2 V −1 s −1 but low switching ratio (<10). The low switching ratio can be explained by the semi‐metal feature of bismuthene or the screening effect of the gate electric field …”
Section: Applications Of 2d V‐v Binary Materialsmentioning
confidence: 99%
“…2D materials have drawn tremendous attention and extensive investigations for emerging applications in energy, electronics, and optoelectronics have been conducted. [ 1,2 ] In particular, 2D transition metal carbides and nitrides (MXenes) are considered as emerging energy materials. Enjoying their endowments in the high hydrophilic surface, porosity, and conductivity, MXenes possess widespread applications in battery, electrocatalyst, supercapacitor, and biochemistry.…”
Section: Figurementioning
confidence: 99%
“…Ultrathin 2D bismuth has also been fabricated on highly oriented pyrolytic graphite (HOPG) and insulating SiC (0001) to investigate their unique 2D TI properties and QSH [105,117]. Very recently, Yang et al demonstrated the direct growth of homogeneous and centimeter-scale layered Bi films with high-purity phase and good crystallinity by the pulsed laser deposition (PLD) technique [128]. Both Bi (111) and Bi (110) films can be readily obtained by controlling the processing temperature, showing thickness-dependent bandgaps ranging from 0.075 to 0.2 eV.…”
Section: Bismuthmentioning
confidence: 99%