Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Long, Jiangyou; Peng, Qingfa; Chen, Gaopan; Zhang, Yuliang; Xie, Xiaozhu; Pan, Guoshun

doi:10.1016/j.ceramint.2021.05.027

Cited by 22 publications

(2 citation statements)

References 35 publications

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“…3a-3e, the smooth LIPSSs instead of nano cluster reported in Ref. 31 are Generated On Induced Surface, Which may the reason for lower content of oxygen.…”

Section: Resultsmentioning

confidence: 84%

“…28,29 Kim et al 30 reported the ablation depth control with a resolution of 40 nm on indium tin oxide thin film using a square, beam shaped femtosecond laser. Long et al 31 achieved centimeterscale low-damage micromachining on single-crystal 4H-SiC substrates using a femtosecond laser with square-shaped flat-top focus spot. Large area processing of GaN using femtosecond laser is not yet reported.…”

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confidence: 99%

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A Novel Strategy Achieving GaN Ultra-Smooth Surface via a Square, Flat Top Beam Shaped Femtosecond Laser Processing Combined with Chemical Mechanical Polishing

Chen¹,

Peng²,

Long³

et al. 2022

ECS J. Solid State Sci. Technol.

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We propose a strategy for GaN ultra-smooth manufacture by combining femtosecond laser processing and chemical mechanical polishing. The optimized flat top beam is used to redistribute the laser fluence from Gaussian distribution to square, flat top profile. A surface with high flatness is achieved after femtosecond laser processing through optimization of the technical parameters. The optimum process to control the damage on the surface and subsurface reduces negative influence of femtosecond laser processing on chemical mechanical polishing. Roughness (Ra) of the processed surface is decreased to less than 0.1 nm when it is polished for 6 hours. Because traditional GaN polishing efficiency faces a bottleneck, the present study proposes using a square, flat top beam shaped femtosecond laser to induce the surface of GaN. Structures and composition on induced surface are simultaneous removed in the chemical mechanical polishing process, reducing the burden of GaN chemical mechanical polishing. This method has the advantage of high efficiency and easy realization, with a wide range of applications in GaN ultra-smooth processing.

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“…3a-3e, the smooth LIPSSs instead of nano cluster reported in Ref. 31 are Generated On Induced Surface, Which may the reason for lower content of oxygen.…”

Section: Resultsmentioning

confidence: 84%

mentioning

confidence: 99%