Centimetre-scale single crystal α-MoO<sub>3</sub>: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Shan, Xin; Wu, Zeyu; Xie, Yangyang; Lin, Xin; Zhou, Baozeng; Zhang, Yupeng; Yan, Xiaobing; Ren, Tian‐Ling; Wang, Fang; Zhang, Kailiang

doi:10.1039/d2nr04530c

Cited by 5 publications

(5 citation statements)

References 47 publications

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“…The highly oxygen-deficient region near the WS 2 layer ensured the resistance switching behavior based on the SCLC effect and could mimic a series of synaptic functions, such as LTP/LTD and STDP. In addition, Shan et al reported a 2T synaptic device that consists of Au/2D α-MoO 3 /Ti (Figure g) . The working mechanism is shown in Figure h.…”

Section: Synaptic Devices Based On 2d Materialsmentioning

confidence: 99%

Section: Synaptic Devices Based On 2d Materialsmentioning

confidence: 99%

“…In addition, Shan et al reported a 2T synaptic device that consists of Au/ 2D α-MoO 3 /Ti (Figure 5g). 212 The working mechanism is shown in Figure 5h. At the initial state, a large number of oxygen vacancies existed in α-MoO 3 .…”

Section: Synaptic Devices Based On 2d Materialsmentioning

confidence: 99%

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2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Xia

Huang

Hang

et al. 2023

ACS Materials Lett.

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Neuromorphic computing can process large amounts of information in parallel and provides a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural network (ANN) is a common means to realize neuromorphic computing, which has exhibited potential applications in pattern recognition, complex sensing, and other areas. Reservoir computing (RC), which is another approach to realize neuromorphic computing, has shown some progress and attracted researchers' attention. Neuromorphic computing can be generally implemented by fabricating memristive array systems. 2D-material-based memristive systems and their applications in ANN and RC have been investigated substantially in recent years due to the unique properties of these systems, such as atomic-level thickness and high carrier mobility. In this Review, we first discuss the volatility and nonvolatility properties of memristive devices and their applications in ANN and RC. Second, 2D materials that can be used to fabricate these devices are introduced, and their classification, physical properties, and preparation methods are presented. Third, we discuss the working mechanisms of 2D-material-based synaptic devices, the mimicked synaptic functions, and the applications of these devices in neuromorphic computing through ANN and RC. Lastly, the performance, progress, and future development directions of 2D-material-based synaptic devices are analyzed. This work systematically investigates the status of 2D-material-based synaptic devices and promotes their utilization in neuromorphic computing.

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Section: Synaptic Devices Based On 2d Materialsmentioning

confidence: 99%

Section: Synaptic Devices Based On 2d Materialsmentioning

confidence: 99%

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2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Xia

Huang

Hang

et al. 2023

ACS Materials Lett.

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“…Fortunately, as previously reported, new layered oxide materials such as MoO 3 can potentially function as high-κ materials with a larger bandgap (>3 eV) and high electron affinity (>6 eV). , Considering the most common 2D insulator h-BN as an example, the fabrication of high-performance devices is based on the synthesis of highly pure h-BN single crystals using high-temperature and high-pressure methods . Despite the recent demonstration of MoO 3 as a dielectric material, the current approaches for synthesizing MoO 3 single crystals that rely on evaporation, chemical vapor deposition, and physical vapor deposition were limited by either the small crystal size − or complex high-temperature vapor process. , Therefore, a method of producing high-quality MoO 3 by removing defects is needed to prospectively improve the dielectric performance of this material. Herein, instead of the commonly used physical vapor deposition method, we utilize the oxidation of molybdenum chloride to synthesize millimeter-sized MoO 3 single crystals that can be efficiently exfoliated into flakes as thin as a few nanometers and as large as hundreds of micrometers.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Large-Sized van der Waals Layered MoO₃ Single Crystals with Improved Dielectric Performance

Zhu,

Yu,

Liu

et al. 2024

Precision Chemistry

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The applications of two-dimensional semiconductors strictly require the reliable integration of ultrathin high-κ dielectric materials on the semiconductor surface to enable fine gate control and low power consumption. As layered oxide materials, MoO3 can be potentially used as a high-κ two-dimensional material with a larger bandgap and high electron affinity. In this work, relying on the oxidization of molybdenum chlorides, we have synthesized α-MoO3 single crystals, which can be easily exfoliated into flakes with thicknesses of a few nanometers and sizes of hundreds of micrometers and fine thermal stability. Based on measurement results of conventional metal/insulator/metal devices and graphene based dual-gate devices, the as-received MoO3 nanosheets exhibit improved dielectric performance, including high dielectric constants and competitive breakdown field strength. Our work demonstrates that MoO3 with improved crystalline quality is a promising candidate for dielectric materials with a large gate capacitance in future electronics based on two-dimensional materials.

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“…High-surface-area plasmonic MoO 3−x was synthesised [55]. Centimetre-scale single-crystal α-MoO 3 was obtained [56], which was used in synaptic devices. Lin and co-workers [57] studied the band structure tuning of α-MoO 3 via tin intercalation.…”

Section: Introductionmentioning

confidence: 99%

Interface Interaction between MoO3 and Carbon Dots Derived from Chitosan Promoted the Photocurrent Extraction Ability of Carriers in a Wide Range of the Light Spectrum

Ma,

Gao,

Zhang

et al. 2024

Coatings

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Due to the large number of defects at the grain boundaries of nanocomposites, defects have a significant effect on the physico-chemical properties of a material. Therefore, controlling the charging behaviour of functional nanocomposites in a non-contact manner with a light field can improve their physical and chemical properties. Chitosan-derived carbon dots were synthesised by exploiting the abundant N element in chitosan. In order to passivate the defects of chitosan-derived carbon dots, a MoO3/carbon dot nanocomposite was constructed in this study to tailor the band gap and improve the extraction ability of carriers through light induction. The results showed that the strong interfacial interaction between MoO3 and carbon dots enhanced the optical absorption and interfacial charge transfer in the visible and some near-infrared regions. The resulting MoO3/carbon dot heterostructure was coated on A4 printing paper, and electrodes were integrated in the coating film. The photocurrent signals of the thick film were investigated using 405, 532, 650, 808, 980 and 1064 nm light sources. The results indicated that the phenomenon of photocurrent switching to the visible light and some near-infrared light regions was observed. The charge carrier extraction ability of the MoO3/carbon dot nanocomposite through light triggering was much better than that of chitosan-derived carbon dots. The on/off ratio and response speed of the MoO3/carbon dot nanocomposite were significantly improved. The physical mechanism was discussed based on the ordered and disordered structures of polymer-derived carbon nanomaterials. This material could be applicable to the development of broadband flexible photosensors, artificial vision or light-utilising interdisciplinary fields.

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Centimetre-scale single crystal α-MoO₃: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Abstract: High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of mature mechanism makes it difficult to obtain high-quality single crystals in large-scale...

Cited by 5 publications

References 47 publications

2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Synthesis of Large-Sized van der Waals Layered MoO₃ Single Crystals with Improved Dielectric Performance

Interface Interaction between MoO3 and Carbon Dots Derived from Chitosan Promoted the Photocurrent Extraction Ability of Carriers in a Wide Range of the Light Spectrum

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Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Abstract: High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of mature mechanism makes it difficult to obtain high-quality single crystals in large-scale...

Cited by 5 publications

References 47 publications

2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

2D-Material-Based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Synthesis of Large-Sized van der Waals Layered MoO3 Single Crystals with Improved Dielectric Performance

Interface Interaction between MoO3 and Carbon Dots Derived from Chitosan Promoted the Photocurrent Extraction Ability of Carriers in a Wide Range of the Light Spectrum

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Product

Resources

About

Centimetre-scale single crystal α-MoO₃: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Synthesis of Large-Sized van der Waals Layered MoO₃ Single Crystals with Improved Dielectric Performance