2012 IEEE International Solid-State Circuits Conference 2012
DOI: 10.1109/isscc.2012.6176970
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Centip3De: A 3930DMIPS/W configurable near-threshold 3D stacked system with 64 ARM Cortex-M3 cores

Abstract: Recent high performance IC design has been dominated by power density constraints. 3D integration increases device density even further, and these devices will not be usable without viable strategies to reduce power consumption. This paper proposes the use of near-threshold computing (NTC) to address this issue in a stacked 3D system. In NTC, cores are operated near the threshold voltage (~200mV above Vth) to optimally balance power and performance [1]. In Centip3De, we operate cores at 650mV, as opposed to th… Show more

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Cited by 62 publications
(32 citation statements)
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“…In [35] and [36], 3-D stacked DRAM and SRAM caches with a vertical wide I/O interconnect have been fabricated at 50-nm and 0.18-μm technology nodes, respectively. In [37], a 3-D memory stacked system with 64 ARM Cortex-M3 cores has been fabricated at a 130-nm technology node. It is designed to be expandable to four tiers of core and cache with three tiers of stacked DRAM.…”
Section: Related Workmentioning
confidence: 99%
“…In [35] and [36], 3-D stacked DRAM and SRAM caches with a vertical wide I/O interconnect have been fabricated at 50-nm and 0.18-μm technology nodes, respectively. In [37], a 3-D memory stacked system with 64 ARM Cortex-M3 cores has been fabricated at a 130-nm technology node. It is designed to be expandable to four tiers of core and cache with three tiers of stacked DRAM.…”
Section: Related Workmentioning
confidence: 99%
“…Near threshold circuits are typically operated 200 mV above their threshold value [17]. Hence here we considered 0.6 V as NTC Vout to be delivered.…”
Section: State Of O/pmentioning
confidence: 99%
“…Bulk CMOS technology with low ESR can provide capacitive density of up to 12 nF/mm 2 , but bottom plate capacitance is highest in MOS Caps among the capacitor technology owing to proximity to substrate (5%-10%). MIM (Metal-insulator-Metal) capacitor with a lower bottom plate parasitic (1%-3%) can provide a good alternative to higher efficiency at the cost of area (3 nF/mm 2 ) and high ESR (Equivalent Series Resistance) [17]. To account for the parasitic losses, we used models of MIM cap and MOS cap in the simulation including the top and bottom plate capacitive parasitic as well as the contact and plate resistance (Figure 12a).…”
Section: Practical Loads and Capacitor Modelsmentioning
confidence: 99%
“…Dim silicon, unlike conventional designs working at nominal supply, aggressively lowers supply voltage close to the threshold to reduce dynamic power. The saved power can be used to activate more cores to exploit more parallelism, trading off per-core performance loss with better overall throughput [5]. However, with near-threshold supply, dim silicon designs suffer from diminishing throughput returns as the core count increases.…”
Section: Introductionmentioning
confidence: 99%