The effects of 10-keV and 400-keV endpoint-energy bremsstrahlung x-rays have been studied using the Monte Carlo simulator, MRED, for MOS capacitors with gate dielectrics and TiN and TaN metal gates. We compute the reduction in dose that occurs for 10-keV x-ray irradiation of thin gate dielectrics sandwiched between the metal gate and the Si substrate. We quantify the effects of back-end-of-line metallization layers, including copper interconnects, W vias, and borophosphosilicate glass (BPSG) and passivation layers for low and medium energy x-rays. For thick metallization stacks irradiated by 10-keV x-rays, dose enhancement or attenuation can occur, depending on material type and overlayer thicknesses. For similar stacks irradiated with 400-keV endpoint-energy bremsstrahlung x-rays, significant dose enhancement is observed.
Index Terms-Dose enhancement,, high-, Monte-Carlo Radiative Energy Deposition (MRED), MOS capacitors, .