“…In 1983 Rob de Groot et al first proposed the concept of half-metallicity; 6 since then, numerous HM materials have been discovered. [7][8][9][10] Normally they are categorized into halfand full-Heusler alloys, 7 zinc blende structured materials (such as MnBi, CrSb), transition-metal magnetic oxides such as Fe 3 O 4 and CrO 2 , perovskite manganite oxides (e.g., La 2/3 Ba 1/3 MnO 3 , La 2/3 Sr 1/3 MnO 3 ), DP oxides such as A 2 FeMoO 6 (where A = Ca, Sr, Ba), Sr 2 FeMoO 6 (SFMO), and Sr 2 FeReO 6 (SFRO). 4,[7][8][9] In order to develop high-performance spintronic devices that can be operated at room temperature (RT), HM materials should meet the following requirements: they should have (i) high Curie temperature (T c , much over RT), (ii) a wide half-metallic gap (D HM ) to block the spin-flip transition of carriers caused by thermal excitation, and (iii) a large bulk magnetocrystalline anisotropy energy to prevent the random and uncontrollable spin switching induced by thermal fluctuation.…”