Cerium dioxide buffer layers at low temperature by atomic layer deposition

Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties

“…It has to be underlined that the atomistic simulations [20,21] show that the formation of crystallites exposing (100) surfaces is unstable because of the dipole generated perpendicular to it. However, the formation of polycrystalline CeO2 with all crystalline orientations is welldemonstrated experimentally by using different growth methods [12,13], and more generally it can be justified considering defects or charge compensating species, i.e. oxygen vacancies due to Ce 3+ : Ce 4+ substitution.…”

“…ALD is a self-limiting technique where thin films deposition can be performed at lower temperatures than other vacuum deposition techniques such as pulsed laser deposition or CVD, and the process condition guarantee low thermal budget, no or limited interdiffusion phenomena, and the possibility to use temperature-sensitive substrates. ALD deposition of CeO2 on Si or Si/SiO2 substrates has been explored by using different precursors [11,12,13,14], obtaining asdeposited films with polycrystalline structure [12,13], which ultimately influences the dielectric behavior [14]. However, ALD of CeO2 on metal substrates has not been explored yet.…”

Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

“…Further, thin films deposition can be performed at lower temperatures than other vacuum deposition techniques such as pulsed laser deposition or CVD, a process condition that guarantees low thermal budget, no or limited interdiffusion phenomena, and the possibility to use temperature-sensitive substrates. ALD deposition of CeO2 on Si or Si/SiO2 substrates has been explored by using various precursors [20,21 ,22 ,23 ,24 ,25 ,26 ,27], obtaining as-deposited film with polycrystalline structure [22][23][24][25] which influences the dielectric behavior [24]. However, ALD of CeO2 on metal substrates (or electrically behaving as metals, such as TiN) has not been explored yet.…”

SrTiO3-based sensors for in situ monitoring of trace levels of oxygen

“…Although PLD is ideal for basic research, it is not feasible for mass production since the use of plumes prevents the deposition of materials on the entire surface of the wafers on which devices are formed. ALD is a candidate process for mass production; 4) 7) however, there is a problem that the SrO surface segregation with a minor contribution from SrO 2 , which can be a p-type semiconductor, affect the detection below an oxygen concentration [P O2 /(P O2 + P He )] of 1.1 © 10…”