Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

Abstract

Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Lightemitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr 3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr 3 QD-LEFET along with an exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr 3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr 3 QD LEFET.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

“…In 2020, Kim et al first employed inorganic perovskite QDs in a light-emitting FET without mixing other organic semiconductors or luminophores (Fig. 5e) [163]. This solution-processed CsPbBr 3 QDs light-emitting FET exhibited a wide recombination zone of 80 µm, electron mobility of 0.12 cm 2 V −1 s −1 , and an I on /I off ratio of 10 3 at 517 nm.…”

“…e Schematic diagram of the CsPbBr 3 QD-based light-emitting field-effect transistor and its transfer curves. Adapted with permission from Ref [163]…”

In Situ Synthesis of Monodispersed CsPbBr3/PGMA‐EDMA Microspheres with High Stability for White Light‐Emitting Diodes

“…Perovskite quantum dots (PQDs) have attracted considerable attention owing to their narrow emission spectrum, high fluorescence quantum yield, tunable wavelength, narrow half‐peak width, and low price. [ 1–5 ] These properties result in excellent device performance in many fields, such as light‐emitting diodes, [ 6–11 ] solar cells, [ 12–16 ] laser detector, [ 17–21 ] photoelectric detector, [ 22–23 ] and optoacoustic conversion. [ 24 ] In 1892, inorganic CsPbX 3 metal halide perovskite was synthesized by Wells for the first time.…”

Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature

“…As a result, nearly six years after the introduction of the PeLET concept, both conventional perovskite field‐effect transistors (FETs) and LETs cannot perform to their full potential. [ 5,13 ] So far, only a few works reported balanced ambipolar transport [ 14–17 ] or light emission from perovskite field‐effect transistors, [ 2,18–20 ] indicative of the severe limitations posed by the intrinsic transport and electroluminescence characteristics of HOIP materials.…”

“…[ 19 ] In a different approach, cesium lead bromide (CsPbBr 3 ) quantum dots sandwiched between poly(9‐carbazole) (PVK) hole‐transporting layer and ZnO electron‐transporting layer were found to exhibit electron mobility of 0.12 cm 2 V −1 s −1 and electroluminescence with EQE of 6.5 × 10 −4 , also at room temperature. [ 20 ] However, the latter devices operated in unipolar regime, where relatively high electron mobility was attributed to channel formation in the metal‐oxide semiconductors layer, while radiative recombination of charge carriers occurred only in the area under or nearby the hole injecting electrode. Significant improvement in operation of single‐layer field‐effect transistors based on a variety of perovskite compositions was reported recently, highlighting the importance of active materials optimization.…”