cells today. While the majority of donoracceptor polymers are hole-conducting (p-type), [3][4][5] important progress has been achieved in the development of high performance, n-type polymeric semiconductors in recent years. [6][7][8] In 2009, Facchetti and co-workers introduced a novel n-type, donor-acceptor polymer, poly{[N,N′-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} P(NDI2OD-T2), which exhibits excellent electron mobilities as high as 0.85 cm 2 V −1 s −1 in top gate transistor devices under ambient conditions; [ 6 ] bulk-mobilities were found in the range of 5 × 10 −3 cm 2 V −1 s −1 for timeof-fl ight and electron-only current measurements. [ 9 ] Promising results have been further shown for all-polymer solar cells based on poly(3-hexylthiophene)s (P3HT) and P(NDI2OD-T2) as donor and acceptor, respectively, reaching power conversion effi ciencies of 1.4%. [ 10 ] Publications on P(NDI2OD-T2) initially focused on the chemistry, [ 7 ] charge transport and injection in multiple devices, [ 9,11,12 ] whereas little was reported about the structure of the semiconductor layer. While at fi rst it was assumed that P(NDI2OD-T2) forms mainly amorphous layers, [ 6 ] X-ray diffraction analysis and transmission electron microscopy (TEM) revealed the semicrystalline character of P(NDI2OD-T2) thin fi lms in recent years. [13][14][15][16][17] Rivnay et al. were the fi rst to show a remarkable degree of in-plane order in as-cast fi lms with an unconventional face-on texture in the bulk. [ 13 ] A striking texture change was observed upon melt-annealing, when the polymer chains undergo a transition from mainly face-on to edge-on. [ 15,18 ] A very recent study by Schuettfort et al. reports on a preferential edge-on texture at the top surface both for as-cast and melt-annealed layers. [ 16 ] Using mainly spectroscopic measurements, Steyrleuthner et al. demonstrated the strong tendency for aggregation not only in thin fi lms but also in solution, thereby identifying two different kinds of aggregates. [ 19 ] The precise stacking mode of the naphthalene diimide (NDI) and bithiophene (T2) units within the crystalline lattice was investigated via TEM by Brinkmann and coworkers [ 17 ] and Heeger and coworkers. [ 20 ] Highly oriented thin fi lms of P(NDI2OD-T2) were prepared by directional epitaxial crystallization (DEC) on 1,3,5-trichlorobenzene (TCB) and epitaxy on aligned fi lms of poly(tetrafl uoroethylene) (PTFE). Two polymorphs were identifi ed: i) in form I, the NDI and T2 which is up to 10 times higher than those perpendicular to the polymer chain.