Chalcogenide glasses with embedded ZnS nanocrystals: Potential mid‐infrared laser host for divalent transition metal ions

Abstract

Chalcogenide glasses (ChGs) containing II‐VI chalcogenide (ChG) nanocrystals such as ZnS/Se have recently been intensively studied as promising mid‐infrared nonlinear optics and laser materials, yet preparation of pure‐phase II‐VI nanocrystals embedded in ChGs via controlled crystallization is still very challenging. In this study, a new system of ChGs and glass ceramics (GCs), viz., (100−x)As2S3–xZnSe (x = 0 ~ 30 mol%), is synthesized, and its physical and optical properties including density, molar volume, microhardness, glass transition temperature, glass network structure, transmission, and refractive index are comprehensively characterized. Significantly, it is initially demonstrated that pure ZnS nanocrystals can be precipitated in GCs simply by a thermal treatment process. The composition and thermal treatment temperature dependencies of crystallization are studied using X‐ray diffraction spectroscopy, and the morphology of the nanocrystals by high‐resolution transmission electron microscope. The ChG GCs with embedded ZnS nanocrystals retaining good transparency can be a potential host laser material for divalent transition metals (e.g., Cr2+/Fe2+, etc.), and thus used for ultrabroadband tunable continuous or ultra‐short‐pulsed mid‐infrared fiber lasers.

Thermal analysis of novel third-generation phase-change materials with zinc as a chemical modifier

“…[11][12][13][14][15][16][17] These features compelled various research groups to utilize Zn as a modier for preparing multicomponent (binary and ternary) ChGs. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Mehta et al 18 compared the effective values of thermal diffusivity and corresponding thermal conductivity of binary Se 90 Zn 10 and Te 90 Zn 10 alloys and found that both parameters are lower for Se 90 Zn 10 alloy as compared to Te 90 Zn 10 alloy. The outcome of Zn addition on the number of defect states per unit volume in the parent Se 70 Te 30 sample was analyzed by Srivastava et al 19 by performing a.c. conductivity measurements.…”

“…11–17 These features compelled various research groups to utilize Zn as a modifier for preparing multicomponent (binary and ternary) ChGs. 18–35…”

“…Alwany et al 30 reported the optical properties of ternary Ge 20 Se 70 Zn 10 alloy by preparing its amorphous thin film. Lu et al 31 designed a novel (As 2 S 3 ) 100− x (ZnSe) x (0 ≤ x ≤ 30) system for the possible applications in Mid-IR fiber lasers and found that these materials show compatibility with a drawing scheme adopted for preparing fibers showing low-loss of signals. Azhniuk and his research group 32 observed the sign of photoinduced creation of ZnSe nano-crystallites during the investigation of the optical characterization of As 2 Se 3 thin films doped with zinc.…”

Mid‐infrared luminesce of ZnS:Cr2+‐glass composite and fiber

“…Design and fabrication of new luminescent materials operating in the Mid‐IR region lies in the core of this topic . In order to obtain materials with broadband emission, many approaches such as codoped with rare‐earth ions, embedding Mid‐IR activators into chalcogenide glasses, etc., have been explored . Cr 2+ ‐doped II‐VI semiconductors such as ZnS and ZnSe exhibit a unique blend of physical, spectroscopic, and optical parameters, which has been recognized as an excellent Mid‐IR luminescent materials .…”

“…[9][10][11][12][13] In order to obtain materials with broadband emission, many approaches such as codoped with rare-earth ions, embedding Mid-IR activators into chalcogenide glasses, etc., have been explored. [14][15][16][17][18] Cr 2+ -doped II-VI semiconductors such as ZnS and ZnSe exhibit a unique blend of physical, spectroscopic, and optical parameters, which has been recognized as an excellent Mid-IR luminescent materials. 19 In this paper, we report the success in incorporation of ZnS:Cr 2+ into borophosphate glass and fabricate the corresponding composite (CZPB).…”