Challenges and current status in 300 mm rapid thermal processing

Glück, Michael; Lerch, W.; Löffelmacher, D.; Hauf, Moritz V.; Kreiser, U.

doi:10.1016/s0167-9317(99)00157-4

Cited by 6 publications

(6 citation statements)

References 10 publications

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“…Various solutions have been deeply studied to obtain uniform wafer temperature as listed in Table 1, but they don't enable to achieve perfect temperature homogeneity and they usually remain very stringent [20]. Heating by several groups of lamps controlled separately allows getting uniform temperature at the surface of the wafer [9,10,21,22]. However, the mastering of the piloting requires a very thorough preliminary optimization and aging of the lamps is accelerated for the ones supplied with higher power.…”

Section: Introductionmentioning

confidence: 99%

“…However, the mastering of the piloting requires a very thorough preliminary optimization and aging of the lamps is accelerated for the ones supplied with higher power. Rotating the wafer allows to homogenize the temperature circularly but the temperature difference between the centre and the edge of the wafer stays unchanged [9,23,24]. Using a susceptor enables to get a better temperature homogeneity [25], nevertheless the addition of a susceptor has the drawback of reducing the rapidity of the heating because thermal inertia becomes more important.…”

Section: Introductionmentioning

confidence: 99%

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Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

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Rapid thermal processes are used in various key stages in the microelectronics industry. In this study, the heat transfer in a rapid thermal system is modelled with the finite volume method. The influence of the radiative properties of the quartz window on the thermal profile of the silicon wafer is first investigated. The obtained temperatures are interpreted by analyzing the radiative properties according to wavelength and temperature. The wafer temperature profile for a non-optimized heating in steady-state is explained by a four-phase scheme where the radiative heat fluxes are depicted. From this scheme, a filter on the underside of the quartz window is envisaged to achieve temperature uniformity for the wafer. Two configurations are tested, one where the filter covers the entire lower surface of the quartz window and another where it is placed in a ring close to the reactor wall to confine the infrared radiations with wavelengths beyond 2.6 mm in order to raise the temperature at the edge of the wafer. Simulations demonstrate that the latter modification enables a more significant improvement of the wafer temperature homogeneity with less than 1% dispersion. The implementation of the filtering window is also discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

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“…As we have known, oxygen precipitation and denude zone in Czochralski (CZ) silicon wafers are the important factors to have influence on the quality of devices [1,2] . In the last decades there were a lot of papers dealing with oxygen precipitation during isothermal, two-or three-step heat processes.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Yang

Qiang

et al. 2006

ECS Trans.

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The effect of nitrogen on oxygen precipitation in nitrogen- doped Czochralski (NCZ) silicon subjected to the simulated CMOS process was investigated. It was found that nitrogen could enhance oxygen precipitation in silicon during the multi- step thermal process. And the denuded zone in NCZ silicon was formed near the surface, through it was not as wide as that in conventional Czochralski (CZ) silicon. It was also found that the loss rates of oxygen concentration in the NCZ silicon pre- annealed by rapid thermal process (RTP) were higher than those in the CZ silicon. In addition, during the multi-step process the oxygen concentrations in the CZ silicon and NCZ silicon after the multi-step pre-annealing, which could create denuded zone, changed slightly.

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“…Rapid thermal processing (RTP) has been intensively employed in modern microelectronic device fabrication such as post-implant anneals [1,2], thermal oxidation [3,4], and shallow junction formation [5]. Over the years, the presentation of the magic denuded zone (MDZ) concept that is believed to be a milestone in the defect engineering of silicon wafers has exploited the application of RTP in the manufacture of silicon wafers [6,7].…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer

Liang

Tian

et al. 2004

J. Phys.: Condens. Matter

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The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050 °C in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050 °C in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050 °C anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050 °C anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050 °C anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

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Challenges and current status in 300 mm rapid thermal processing

Cited by 6 publications

References 10 publications

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer

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