Challenges and potential of new approaches for reliability assessment of nanotechnologies

Béchou, Laurent; Danto, Yves; Delétage, Jean-Yves; Verdier, François; Deshayes, Yannick; Fregonèse, Sébastien; Maneux, Cristell; Zimmer, Thomas; Laffitte, D.

doi:10.1016/j.crhy.2007.12.001

Cited by 3 publications

(2 citation statements)

References 28 publications

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“…It is well known that the regular dimension of a single defect (50 Å) is smaller than De Broglie electron wavelength (240 Å for GaAs material). Impact on optical transitions and electrical transport in the LED structure should be analyzed using quantum theory [2]. Moreover, it has been already reported that mechanical stresses can modify the semiconductor band energies and, thus, physical parameters [3].…”

Section: Introductionmentioning

confidence: 99%

Failure Mechanisms in Packaged Light-Emitting Diodes Under Gamma Radiations: Piezoelectric Model Based on Stark Effect

Deshayes

Baillot

Rehioui

et al. 2011

IEEE Trans. Device Mater. Relib.

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Degradation of packaged light-emitting diodes (LEDs) under gamma irradiations has been investigated using usual electro-optical characterizations. Failure mechanisms have been revealed by an accurate degradation model taking into account the Stark effect in electroluminescence spectrum and piezoelectric field in the active zone. Gamma irradiations have induced an additional mechanical stress close to 0.25 MPa in the active layer resulting from the change of the polymer mechanical properties used on the LED package.

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Section: Introductionmentioning

confidence: 99%

Failure Mechanisms in Packaged Light-Emitting Diodes Under Gamma Radiations: Piezoelectric Model Based on Stark Effect

Deshayes

Baillot

Rehioui

et al. 2011

IEEE Trans. Device Mater. Relib.

Self Cite

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“…Generally, the volume of a single defect is close to 50 Å, which is weaker than the De Broglie wavelength of the material (240 Å for GaAs). In this case, the impact on optical transitions and transport of carriers in the structure must be analyzed using quantum theory [2]. To create such controlled defects in the structure, it is necessary to avoid classical accelerated tests and to propose new strategy.…”

mentioning

confidence: 99%

Stark Effects Model Used to Highlight Selective Activation of Failure Mechanisms in MQW InGaN/GaN Light-Emitting Diodes

Deshayes

Béchou

Ousten

2010

IEEE Trans. Device Mater. Relib.

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This paper demonstrates the feasibility of creating specific defects in double-heterostructure InGaN/GaN commercial light-emitting diodes by neutron irradiation. Using controlled neutron energy, only one failure mechanism can be activated. Defects are located on the side of the chip and increase the leakage current driven by the well-known Poole-Frenkel effect with E c − E T = 130 meV electron trap energy level. The maximal amplitude of the optical spectrum also reveals a drop of about 20% associated with the rise of the leakage current. The Stark effect model highlights the origin of the degradation. Index Terms-GaN, physics of failure, quantum well, Stark effect. I. CONTEXT AND OBJECTIVESN UMEROUS papers have reported thermal and/or current activation drives to observe more than two different failure mechanisms in optoelectronic devices [1]. In this case, the extrapolation of degradation laws is exclusively empirical. For laser diodes, LEDs, and new technologies, this methodology is not perfectly suitable to extrapolate a lifetime distribution.One of the possible solutions in actual technologies consists of distinguishing each failure mechanism. However, the main difficulty is activating specific defects in the structure to isolate associated failure mechanisms. Generally, the volume of a single defect is close to 50 Å, which is weaker than the De Broglie wavelength of the material (240 Å for GaAs). In this case, the impact on optical transitions and transport of carriers in the structure must be analyzed using quantum theory [2]. To create such controlled defects in the structure, it is necessary to avoid classical accelerated tests and to propose new strategy. One solution consists of using particles that have an equivalent wavelength that is close to the defect area with energy higher than the covalent energy. In this context, we are going to demonstrate that controlled neutron energy irradiation is a useful methodology for selective activation of failure mechanisms in packaged double-heterostructure LEDs. Fig. 1. Internal structure of the MQW InGaN/GaN LED.Mixing nanodegradation and quantum theory in relation with carrier transport and optical transitions, quantum degradation laws are investigated. If the material dimension is larger than 100 nm, the degradation laws must be written using a continuous function. For nanocomponents, the degradation laws must be quantified. In the two cases, the quantum theory is well adapted, and the accurate model of degradation can be built for all technology.This paper highlights the feasibility of the methodology to activate only one kind of defects and adjust this methodology. Double-heterostructure LEDs (DH-LEDs) have been used because all failure mechanisms are well known: defect diffusion in the active zone, leakage current on the side of the chip, and gradual variations of series resistance [3]-[5]. In our case, the leakage current arises from specific neutron energy of about 2.9 MeV and weak flux (1850 cm −2 · s −1 ).The key issue is knowing if neutron irradiation c...

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Addressing failure rate uncertainties of marine energy converters

2012

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The interest in marine renewable energy is strong, but has not led to significant commercial scale investment and deployment, yet. To attract investors and promote the development of a marine renewable industry a clear concept of project risk is paramount, in particular issues relating to device reliability are critical. In the public domain, reliability information is often scarce or inappropriate at this early stage of development, as little operational experience has been gained. Thus, reliability estimates are fraught with large uncertainties. This paper explores sources and magnitudes of failure rate uncertainty and demonstrates the effect on reliability estimates for a notional marine energy converter. If generic failure rate data forms the basis of a reliability assessment, reliability estimates are not robust and may significantly over-or underestimate system reliability. The Bayesian statistical framework provides a method to overcome this issue. Generic data can be updated with more specific information that could not be statistically incorporated otherwise. It is proposed that adopting such an approach at an early stage in an iterative process will lead to an improved rate of certainty.

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Challenges and potential of new approaches for reliability assessment of nanotechnologies

Cited by 3 publications

References 28 publications

Failure Mechanisms in Packaged Light-Emitting Diodes Under Gamma Radiations: Piezoelectric Model Based on Stark Effect

Failure Mechanisms in Packaged Light-Emitting Diodes Under Gamma Radiations: Piezoelectric Model Based on Stark Effect

Stark Effects Model Used to Highlight Selective Activation of Failure Mechanisms in MQW InGaN/GaN Light-Emitting Diodes

Addressing failure rate uncertainties of marine energy converters

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