2016
DOI: 10.1117/12.2241089
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Challenges and solutions for high performance SWIR lens design

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Cited by 3 publications
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“…Since the two cameras are not completely identical in their properties and for the stringent allocation of the wavelengths during the measurement, each of the two cameras is allocated to a spectral range and named after it for better differentiation. The NIR Due to a further etching step during production, the indium phosphor (InP) passivation layer on top of the InGaAs layer is thinned out, so that also visible photons can pass through [42][43][44]. Due to the small bandgap of InGaAs, electrons can pass more easily from the valence band into the conduction band by thermal excitation, which leads to an increased intrinsic dark current compared to their silicon counterparts [42,45].…”
Section: Hardware Designmentioning
confidence: 99%
“…Since the two cameras are not completely identical in their properties and for the stringent allocation of the wavelengths during the measurement, each of the two cameras is allocated to a spectral range and named after it for better differentiation. The NIR Due to a further etching step during production, the indium phosphor (InP) passivation layer on top of the InGaAs layer is thinned out, so that also visible photons can pass through [42][43][44]. Due to the small bandgap of InGaAs, electrons can pass more easily from the valence band into the conduction band by thermal excitation, which leads to an increased intrinsic dark current compared to their silicon counterparts [42,45].…”
Section: Hardware Designmentioning
confidence: 99%