2011 9th IEEE International Conference on ASIC 2011
DOI: 10.1109/asicon.2011.6157181
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Challenges and trends in low-power 3D die-stacked IC designs using RAM, memristor logic, and resistive memory (ReRAM)

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Cited by 20 publications
(6 citation statements)
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“…Since the feature size of SRAM is around 125 F 2 [19] (while that of RRAM around 4 F 2 [20]), it can offer around 30x bigger storage capacity than the SRAM-based cache. To make our baseline NVM-cache denser, we proposed 3D-stacked NVM-cache, which piles up four memory layers, and each of them has a single pre-decode logic [16], [17].Based on our experiment analysis, we observe that the baseline NVM-cache already can minimize off-chip memory accesses under many modern GPU computing applications. Therefore, in this work, we reduce the area size of LLC by employing our 3D-stacked NVM-cache architecture but it is still able to offer the storage capacity as same as what the baseline NVM-cache provides.…”
mentioning
confidence: 94%
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“…Since the feature size of SRAM is around 125 F 2 [19] (while that of RRAM around 4 F 2 [20]), it can offer around 30x bigger storage capacity than the SRAM-based cache. To make our baseline NVM-cache denser, we proposed 3D-stacked NVM-cache, which piles up four memory layers, and each of them has a single pre-decode logic [16], [17].Based on our experiment analysis, we observe that the baseline NVM-cache already can minimize off-chip memory accesses under many modern GPU computing applications. Therefore, in this work, we reduce the area size of LLC by employing our 3D-stacked NVM-cache architecture but it is still able to offer the storage capacity as same as what the baseline NVM-cache provides.…”
mentioning
confidence: 94%
“…Since the feature size of SRAM is around 125 F 2 [19] (while that of RRAM around 4 F 2 [20]), it can offer around 30x bigger storage capacity than the SRAM-based cache. To make our baseline NVM-cache denser, we proposed 3D-stacked NVM-cache, which piles up four memory layers, and each of them has a single pre-decode logic [16], [17].…”
mentioning
confidence: 99%
“…Emerging non-volatile memory (NVM) technologies, such as oxygen vacancy-driven resistive switches, also known as ReRAM or memristors ( Chang et al, 2011 ; Wong et al, 2012 ; Chen, 2020 ), can combine data processing and storage. Memristor matrices (crossbar arrays) use physical principles to enable efficient parallel multiply-accumulate (MAC) operations ( Hu et al, 2018 ).…”
Section: Introductionmentioning
confidence: 99%
“…In this architecture, memory devices and access devices are directly connected by a stacking method for high-density implementation. However, in addition to PRAMs, magnetic random access memories and resistive random access memories (ReRAMs) are considered as memory devices for highdensity 3D memories [5][6][7][8][9]. Further, a variety of access devices such as silicon-metal diodes, silicon NPN devices, and threshold vacuum switching devices are being considered [10].…”
Section: Introductionmentioning
confidence: 99%