ECS Trans.
 2006
DOI: 10.1149/1.2356286
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Challenges in Dual Workfunction Metal Gate CMOS Integration

Byoung Hun Lee1,
Seung-Chul Song2,
R. Jammy3
et al.

Abstract: Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment.

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