Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates

Eremeev, Yu. A.; Vorobev, M. G.; Гращенко, А. С.; Semencha, A. V.; Осипов, А. В.; Кукушкин, С. А.

doi:10.1134/s1063783422110038

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2024

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Cited by 2 publications

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Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method

Afanaseva,

Klinkov,

Belichenko

et al. 2023

2023 International Conference on Electrical Engineering and Photonics (EExPolytech)

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Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method

Afanaseva,

Klinkov,

Belichenko

et al. 2023

2023 International Conference on Electrical Engineering and Photonics (EExPolytech)

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Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

Kidalov,

Revenko,

Duleba

et al. 2024

ECS J. Solid State Sci. Technol.

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This study presents an investigation into the properties of SiC/por-Si structures obtained by the method of coordinated substitution of atoms (MCSA). Experimentally, it was determined that during the formation of the SiC layer, the ordered mesoporous structure of the silicon substrate is significantly altered. The morphology and structure of the samples were characterized using scanning electron microscopy, and further characterization of the heterostructure was carried out via glancing angle X-ray diffraction. The mechanical stresses in the SiC/por-Si heterostructure were experimentally determined using both X-ray diffraction and Raman spectroscopy. Finite element modeling was also used to assess the mechanical stresses in the obtained SiC/por-Si structure with the aim of establishing a correlation between theoretical and experimental data.

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Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates

Cited by 2 publications

References 6 publications

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method

Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

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Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates

Cited by 2 publications

References 6 publications

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr3/Cs4PbBr6 Prepared by Cold Injection Wet Method

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr3/Cs4PbBr6 Prepared by Cold Injection Wet Method

Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

Contact Info

Product

Resources

About

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method

Degradation of Luminescent Properties and Changes in the Phase Composition of CsPbBr₃/Cs₄PbBr₆ Prepared by Cold Injection Wet Method