Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

Cho, M.-H.; Kim, C. Y.; Moon, Kyungsun; Chung, Kwang-Hwa; Yim, C. J.; Ko, Dae Hong; Sohn, Hyunchul; Jeon, Hyeongtag

doi:10.1063/1.2955461

Cited by 5 publications

(3 citation statements)

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“…A similar phenomenon was observed for HfSiO films grown by the atomic vapor deposition technique [17,18]. The effect of the formation of HfO 2 -rich and SiO 2 -rich regions in HfSiO materials was explained similarly to that observed for ZrSiO [15,17].…”

Section: Introductionsupporting

confidence: 76%

“…Such a requirement comes from the fact that grain boundaries act as diffusion paths for dopants or oxygen towards the film/substrate interface. Thus, it was observed that post-growth oxidation of pure HfO 2 layers in a 18 O 2 atmosphere at 490-950 • C results in oxygen exchange without increasing the oxygen content in the films [3]. The atomic diffusion of oxygen via oxygen lattice exchange was found to be the predominant diffusion mechanism.…”

Section: Introductionmentioning

confidence: 97%

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Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Khomenkova¹,

Portier

Cardin

et al. 2010

Nanotechnology

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The microstructure and optical properties of HfSiO films fabricated by RF magnetron sputtering were studied by means of x-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry and attenuated total reflection infrared spectroscopy versus annealing treatment. It was shown that silicon incorporation in the HfO(2) matrix plays an important role in the structure stability of the layers. Thus, the increase of the annealing temperature up to 1000 degrees C did not lead to the crystallization of the films. The evolution of the chemical composition as well as a decrease of the density of the films was attributed to the phase separation of HfSiO on HfO(2) and SiO(2) phases in the film. An annealing at 1000-1100 degrees C results in the formation of the multilayer Si-rich/Hf-rich structure and was explained by a surface-directed spinodal decomposition. The formation of the stable tetragonal structure of HfO(2) phase was shown upon annealing treatment at 1100 degrees C.

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Section: Introductionsupporting

confidence: 76%

Section: Introductionmentioning

confidence: 97%

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Khomenkova¹,

Portier

Cardin

et al. 2010

Nanotechnology

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“…2. Although it was very difficult to accurately deconvolute the Hf peak with subpeaks coming from Hf-germanate, the change in the Hf 4f peak after annealing treatment clearly shows that a subpeak is generated; i.e., the broadening of the peak increases in the film with a high SiO 2 fraction as the annealing temperature increases, indicating the enhancement of the formation of the HfGeO layer. 16 Using the peak change, we can roughly deconvolute the Hf 4f peak into Hf-silicate and HfGeO subpeaks that are located at a relatively higher-binding energy state compared to the Hfsilicate peak ͑see happened during the formation of Hf silicate in a HfO 2 / Si system. The instability of silicate film causes a phase separation effect at high temperature.…”

mentioning

confidence: 99%

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Cho

Lee

Kim

et al. 2008

The Journal of Chemical Physics

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The interfacial reaction of hafnium-silicate [(HfO(2))(x)(SiO(2))(1-x), x=0.5,0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO(2) (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO(2) in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO(2) fraction.

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Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si_0.7Ge_0.3(001) as a function of annealing temperature

Kim

Kang

et al. 2013

Phys. Status Solidi A

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Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO 2 films on SiGe substrates. Two concentrations [100% HfO 2 and 50% HfO 2 50% SiO 2 (HfSiO)] were used on strained Si 0.7 Ge 0.3 substrates; a partially-crystalline phase was observed in the asgrown HfO 2 film, and was not observed in the as-grown HfSiO film. Phase separation between the SiO x and HfO x in HfSiO film did occur, however, when the annealing temperature was increased to over 900 8C, leading to the out-diffusion of Si from the Si 0.7 Ge 0.3 substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si 0.7 Ge 0.3 . Finally, the strain in the Si 0.7 Ge 0.3 substrate was relaxed, and interfacial states greatly increased in HfSiO/Si 0.7 Ge 0.3 with the 900 8C anneal.ß 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction As the size of Si-based metal-oxidesemiconductor (MOS) devices decrease and higher speeds are required for operation, advanced MOS structure research has focused on new potential materials for high performance applications. Among high mobility semiconductor materials, strained Si 1Àx Ge x has attracted both industry and academic research due to a higher hole mobility value (1050 cm 2 /V s at Si 0.2 Ge 0.8 ) than that of Si (505 cm 2 /V s) [1,2]. HfO 2 is an attractive material for the replacement of conventional SiO 2 ; a high dielectric constant (K ¼ 15-20) leads to increased thickness, which can reduce current leakage across the gate oxide through direct tunneling. Specifically, SiO 2 -incorporated HfO 2 films (Hf-silicate) show good thermal stability and an acceptable band offset value when in contact with Si [3,4]. However, Hf-silicate films can separate readily into SiO 2 and HfO 2 , depending on the film composition and annealing temperature [5,6]. In our previous reports, phase separation of HfSiO film on a Si substrate was observed after rapid thermal annealing (RTA) at 900 8C, leading to a downgrading of electrical properties [7]. We noted that the

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Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

Cited by 5 publications

References 15 publications

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si_0.7Ge_0.3(001) as a function of annealing temperature

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Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

Cited by 5 publications

References 15 publications

Thermal stability of high-kSi-rich HfO2layers grown by RF magnetron sputtering

Thermal stability of high-kSi-rich HfO2layers grown by RF magnetron sputtering

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature

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Product

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Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si_0.7Ge_0.3(001) as a function of annealing temperature