Change in the phase growth rates in Cu-Si films subjected to ion implantation

Shpilevsky, E. M.; Shpilevsky, M.E.; Андреев, М. А.

doi:10.1016/0257-8972(95)08339-1

Cited by 4 publications

(2 citation statements)

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“…Cu–Si bilayers (100 nm Cu layers deposited on thermally oxidized silicon and followed by Si layers of different thickness, between 40 and 120 nm) were prepared by Shpilewsky et al. [27] . Some of them were subjected to implantation of Ar ions.…”

Section: Resultsmentioning

confidence: 99%

“…By comparing implanted and non-implanted samples after annealing at different temperatures between 100 and 700 °C they observed that ɛ-Cu 15 Si 4 is only formed in implanted samples where the maximum density of implanted Ar is close to the Cu/Si interface. They concluded that initiation of ɛ-Cu 15 Si 4 during irradiation and subsequent annealing may then be attributed to a change in thermodynamic and kinetic parameters of phase formation on ion implantation [27] .…”

Section: Resultsmentioning

confidence: 99%

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Experimental investigation of the Cu–Si phase diagram at x(Cu)>0.72

et al. 2011

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Cu–Si phase equilibria have been investigated at compositions greater than 72 at.% Cu by X-ray diffraction, optical and electronic microscopy, electron probe microanalysis and differential thermal analysis.The general aspects of the phase equilibria already reported in literature have been substantially confirmed, but selected composition ranges and the nature of a few invariant equilibria have been modified. In particular stability ranges of the β, δ and η phases have been slightly modified as well as temperature and nature of the invariant equilibria related to the γ ⇄ δ transformation.Stability of the ɛ-(Cu15Si4) phase has been especially investigated concluding that it is thermodynamically stable but kinetically inhibited by nucleation difficulties which become especially effective when samples are synthesized in very high purity conditions.Crystal structure and composition ranges of the high temperature β and δ phases, despite difficulties by the non-quenchability of these phases, have been investigated by different methods including high temperature XRD.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Experimental investigation of the Cu–Si phase diagram at x(Cu)>0.72

et al. 2011

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Low temperature formation of copper rich silicides

2019

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The reactions of copper and amorphous silicon were studied by in-situ transmission electron microscopy up to 500 C. Only the Cu 76 Si 24-h phase and the Cu 82 Si 18-d phase formed at this temperature. The crystal structure of the dominating Cu 76 Si 24 changed, by the elapsed time after heating. The CueSi ordering resulted in different supercells, built up by topologically identical subcells with different site occupancies and arrangement. Two modulated crystal structures were solved based on diffraction data and HRTEM images.

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