Materials Science and Engineering: B
 2024
DOI: 10.1016/j.mseb.2024.117503
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Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes

Pradip Dalapati,
Subramaniam Arulkumaran,
Dinesh Mani
et al.
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