Changes in carrier dynamics induced by proton irradiation in quantum dots

Marcinkevičius, Saulius; León, R.; Čechavičius, Bronislovas; Siegert, J.; Lobo, Charlene; Magness, B.; Taylor, W. A.

doi:10.1016/s0921-4526(01)01361-8

Cited by 20 publications

(20 citation statements)

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“…Quantum dots are also more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, preferred characteristics for use in space solar cells. [17][18][19] The possibilities of increased efficiency and resistance to radiation-induced defects led us to investigate quantum dots as part of our ongoing research on chalcopyrite materials for space photovoltaic applications. In contrast to the overall quantity of quantum dot research 20 in the literature, relatively few reports [21][22][23][24][25][26][27][28][29] have been published about the synthesis of nanosized I-III-VI 2 ternary materials CuInS 2 and CuInSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

et al. 2004

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Thermal decomposition of the molecular single-source precursor (PPh 3 ) 2 CuIn(SEt) 4 in the presence of hexanethiol in dioctylphthalate forms colloidal CuInS 2 at 200 °C. The colloidal solution displays size-dependent quantum confinement behavior in the absorption and photoluminescence spectra. The average size of the nanocrystals can be increased from 2 to 4 nm by raising the reaction temperature from 200 °C to 250 °C. The nanoparticles are capped with hexanethiol ligands; these ligands can be exchanged with trioctylphosphine oxide or pyridine. The nature of the surface-capping ligands has a significant effect on the photoluminescence emission intensity. Investigation of the effect of synthesis parameters and postsynthesis treatments on the optical properties of the nanocrystals leads to the conclusion that the room-temperature emission originates in donor-acceptor defects.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

et al. 2004

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“…45 Quantum dots are also expected to be resistant to degradation from electron, proton, and alpha particle radiation, a requirement for use in space solar cells. [46][47][48] In III-V materials, an InP p-i-n cell with quantum wells of InAsP has been shown to have greater resistance to proton irradiation than an unadulterated InP cell. 47 It is expected that the same trend will be observed for I-III-VI 2 materials as well.…”

Section: Quantum Dots For Preparing Nanocomposite Materialsmentioning

confidence: 99%

Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

Hepp

McNatt²,

Bailey³

et al. 2007

5th International Energy Conversion Engineering Conference and Exhibit (IECEC)

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“…These can be explained by defect assisted carrier relaxation, and by defect assisted tunneling in cases with potential barrier surrounding QD's. 3 The effects of dislocation defects on QD properties are also of interest due to several promising technological applications. The growth of multistacked planes containing quantum dots is used to increase gain in lasers.…”

Section: Introductionmentioning

confidence: 99%

Defect states in red-emittingInxAl1−xAsquantum dots

et al. 2002

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Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot ͑QD͒ states is obtained at ϳ1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds ͑from ϳ1 ns͒ and produce deep level transient spectroscopy ͑DLTS͒ peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.

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Changes in carrier dynamics induced by proton irradiation in quantum dots

Cited by 20 publications

References 9 publications

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

Defect states in red-emittingInxAl1−xAsquantum dots

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Changes in carrier dynamics induced by proton irradiation in quantum dots

Cited by 20 publications

References 9 publications

Synthesis and Characterization of Colloidal CuInS2Nanoparticles from a Molecular Single-Source Precursor

Synthesis and Characterization of Colloidal CuInS2Nanoparticles from a Molecular Single-Source Precursor

Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

Defect states in red-emittingInxAl1−xAsquantum dots

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Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor