2021
DOI: 10.1088/1402-4896/ac369f
|View full text |Cite
|
Sign up to set email alerts
|

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Abstract: The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequen… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 62 publications
0
1
0
Order By: Relevance
“…Monolayer Gr is a promising material for photodetector applications owing to its conductivity, ultrahigh mobility and stability, which are ideal properties for high-speed photodetection [23][24][25]. However, the light absorption of monolayer Gr is very weak because of its ultrathin structure and zero band gap.…”
Section: Introductionmentioning
confidence: 99%
“…Monolayer Gr is a promising material for photodetector applications owing to its conductivity, ultrahigh mobility and stability, which are ideal properties for high-speed photodetection [23][24][25]. However, the light absorption of monolayer Gr is very weak because of its ultrathin structure and zero band gap.…”
Section: Introductionmentioning
confidence: 99%