Channel and Substrate Currents in GaAs FETS Due to Ionizing Radiation

Zuleeg, R.; Notthoff, J. K.; Troeger, G.L.

doi:10.1109/tns.1983.4333099

Cited by 20 publications

(2 citation statements)

References 6 publications

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“…Rail-span collapse was addressed in studies on the broader subject of how supply-voltage variation influences RAM data retention [4][5][6][13][14][15][16]. established experimentally the following:…”

Section: Rail-span Collapsementioning

confidence: 99%

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

Kirgizova¹,

Nikiforov²,

Grigor’ev³

et al. 2006

Russ Microelectron

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The dominant mechanisms are analyzed of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology. Data reliability under transient irradiation is discussed in relation to photocurrents, rail-span collapse, and the circuit and layout design of memory cells. The response is simulated of SOS integrated resistors to transient radiation. Optimal parameter values are thus determined for the resistor used in the RC network of a memory cell. It is found that the data reliability of the memory circuits considered is affected by the cross coupling of memory cells sharing a read/write line. The lifetime of radiation-induced charge carriers is estimated by experiment and computer simulation.

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Section: Rail-span Collapsementioning

confidence: 99%

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

Kirgizova¹,

Nikiforov²,

Grigor’ev³

et al. 2006

Russ Microelectron

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show abstract

“…Pulses of this ionizing radiation typically cause an initial increase in the current in devices due to photocurrent effects, The photocurrents generated ih the semi-insulating substrate seem to be the predominant source of excess currents when the devices are irradiated. When the pulse has ceased, transients on the order of several seconds can occur due to the thermalization of trapped charge which was captured by deep levels in the substrate during the ionizing pulse [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Buried-channel GaAs MESFET's with immunity to ionizing optical radiation effects

Canfield

Forbes²

1987

IEEE Electron Device Lett.

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The effects of high-intensity visible light upon various GaAs MESFET structures are examined and compared. The buried-channel MESFET's were found to he insensitive to ionizing radiation both in terms of increases of the drain current due to photocurrents and in terms of long-term transients due to charging of deep levels as is found in standard FET's. These results indicate that the buried-channel MES-FET's should be significantly more immune to transient radiation effects in severe radiation environments.

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Radiation Effects in GaAs Integrated Circuits

Zuleeg¹

1985

GaAs Microelectronics

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Channel and Substrate Currents in GaAs FETS Due to Ionizing Radiation

Cited by 20 publications

References 6 publications

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

Buried-channel GaAs MESFET's with immunity to ionizing optical radiation effects

Radiation Effects in GaAs Integrated Circuits

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