2010
DOI: 10.1002/smll.200902407
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Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors

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Cited by 87 publications
(88 citation statements)
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“…We note that the assynthesized GO sheets were electrically active without any further chemical and/or thermal treatment, in contrast to chemically derived GO [8][9][10][11] , and the measured carrier (hole) mobility of the GO sheet with O/C composition of 0.32 is superior to the previously reported mobility values of chemically reduced GObased FETs 1,42-44 . The higher overall mobilities in our devices, compared with those achieved in chemically reduced GO flakes, could be attributed to the morphological nature of the monolithic GO sheets without any junction/overlapping regions between graphitic grains since the weak coupling between adjacent GO flakes (that is, the high internanosheet resistance) may cause the device performance to be much less than that of single nanosheets 45 . In addition, the conductivity of both samples at all gate voltages from À 80 to þ 80 V increased with temperature, indicating that both types exhibit semiconducting behaviour, in contrast to the semimetallic prinstine graphene 41 .…”
Section: Synthesis Of the Go Sheetsmentioning
confidence: 76%
“…We note that the assynthesized GO sheets were electrically active without any further chemical and/or thermal treatment, in contrast to chemically derived GO [8][9][10][11] , and the measured carrier (hole) mobility of the GO sheet with O/C composition of 0.32 is superior to the previously reported mobility values of chemically reduced GObased FETs 1,42-44 . The higher overall mobilities in our devices, compared with those achieved in chemically reduced GO flakes, could be attributed to the morphological nature of the monolithic GO sheets without any junction/overlapping regions between graphitic grains since the weak coupling between adjacent GO flakes (that is, the high internanosheet resistance) may cause the device performance to be much less than that of single nanosheets 45 . In addition, the conductivity of both samples at all gate voltages from À 80 to þ 80 V increased with temperature, indicating that both types exhibit semiconducting behaviour, in contrast to the semimetallic prinstine graphene 41 .…”
Section: Synthesis Of the Go Sheetsmentioning
confidence: 76%
“…The sensitivity of the fabricated device ranges from 0.25 to 0.63% °C −1 , which is better than the properties of RTDs fabricated on a fl exible substrate. [ 5,39 ] Based on the charge-hopping transport mechanism of R-GO thin fi lms, [83][84][85] Trung and coworkers [ 67,86 ] developed a fl exible temperature sensor using an R-GO/P(VDF-TrFE) nanocomposite as the sensing layer. The fl exible temperature sensor in the form of an FET structure is presented in Figure 3 a.…”
Section: Thermistorsmentioning
confidence: 99%
“…Studies of electronic conduction in R-GO networked fi lms have shown that conduction is attributed to two main components: i) the intra-nanosheet resistance ( R intra ), which is controlled by structural defects of single R-GO nanosheets, and ii) the inter-nanosheet resistance ( R inter ), which is affected by the nanosheet junctions. [83][84][85]142 ] Under the strain mode, the resistance of a networked R-GO fi lm is expected to be strongly modulated because of the changing of R inter at the nanosheet junctions. Based on these aspects, networked R-GO thin fi lms can be used to fabricate piezoresistive strain sensors.…”
Section: Reviewmentioning
confidence: 99%
“…High mobility (∼ 10,000 cm 2 /Vs) 15 epitaxial graphene can be obtained in thermal decomposition of SiC, however high cost and limited SiC wafer size may restrain its wide applications. The chemical reduction of GO can also produce graphene-based connected films in large-scale, but the major drawback is low electrical mobility (∼ 1 cm 2 /Vs) 16,17 originating from their defective structures. Among these methods, metal catalytic CVD has become one of the most promising ways in synthesizing large-scale graphene films since this method gives transferable high-quality graphene films with high yield, relatively low cost and large area whose size is limited only by the metal substrate and furnace.…”
Section: Introductionmentioning
confidence: 99%