Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Park, So Jeong; Jeon, D.; Sessi, Violetta; Trommer, Jens; Heinzig, André; Mikolajick, Thomas; Kim, Gyu Tae; Weber, Walter M.

doi:10.1021/acsami.0c12595

Cited by 12 publications

(12 citation statements)

References 36 publications

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“…Further, the output characteristics for hole and electron conduction as well as their respective schematic band diagrams are shown in Figure 4c,d, respectively. Typical for SBFETs, 56,57 both output characteristics reveal a supralinear behavior for a small V D , with the on-currents showing a high variation.…”

Section: Table 1 Calculated Diffusion Coefficients Of the Al−simentioning

confidence: 88%

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

Wind

Böckle

Sistani

et al. 2022

ACS Appl. Mater. Interfaces

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Overcoming the difficulty in the precise definition of the metal phase of metal−Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al−Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and Al contacts. This is enabled by a thermally induced Al−Si exchange reaction, which forms abrupt and void-free metal−semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as ρ = (6.31 ± 1.17) × 10 −8 Ω m and breakdown current densities of J max = (1 ± 0.13) × 10 12 Ω m −2 . Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al−Si−Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back-and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal−oxide semiconductor fabrication, the proposed thermally induced Al−Si exchange reaction may give rise to the development of nextgeneration reconfigurable electronics relying on reproducible nanojunctions.

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Section: Table 1 Calculated Diffusion Coefficients Of the Al−simentioning

confidence: 88%

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

Wind

Böckle

Sistani

et al. 2022

ACS Appl. Mater. Interfaces

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“…The reason for this is the impact of the drain on the sourceside SB provided by the charge within the channel in the ON-state of the device. Note that this is a different mechanism compared to a recent publication where the drain's impact on the source was due to short channel effects (SCEs) [21]. Hence, the sub-linearity is not a consequence of SCEs and also appears in long-channel SB-MOSFETs.…”

mentioning

confidence: 68%

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Knoch

Sun

2022

IEEE Trans. Electron Devices

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This article studies the sub-linearity of the output characteristics measured in Schottky-barrier metaloxide-semiconductor field-effect transistors with simulations and experiments. It is shown that the sub-linearity is not due to the forward-biased Schottky diode at the drain contact interface but due to the drain bias impact on the source-side Schottky-barrier, resulting in an increased carrier injection with increasing drain-source voltage. The simulation results are confirmed with the measurements of fabricated dual-gate Schottky-barrier transistors.

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“…The Si 1− x Ge x /Au NWs reveal a highly symmetric and gate-independent characteristic. In contrast, the Si 1− x Ge x NWs show a typical slightly asymmetric I/V characteristic and charge carrier modulation capability by the back-gate voltage [ 70 ].…”

Section: Resultsmentioning

confidence: 99%

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

et al. 2023

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Si1−xGex nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteristics and the dosing of individual precursors. The group IV alloy NWs are single crystalline with a constant diameter along their axis. During the wire growth by low pressure CVD, an Au-containing surface layer on the NWs forms by surface diffusion from the substrate, which can be removed by a combination of oxidation and etching. The electrical properties of the Si1−xGex/Au core-shell NWs are compared to the Si1−xGex NWs after Au removal. Core–shell NWs show signatures of metal-like behavior, while the purely semiconducting NWs reveal typical signatures of intrinsic Si1−xGex. The synthesized materials should be of high interest for applications in nano- and quantum-electronics.

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Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Cited by 12 publications

References 36 publications

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

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