2024
DOI: 10.3390/electronics13081573
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Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Taeyoung Cho,
Sungyeop Jung,
Myounggon Kang

Abstract: In this study, the channel potential of inhibited strings in 3D NAND flash memory using a bandgap-engineered tunneling oxide (BE-TOX) structure is analyzed. The equivalent oxide thickness (EOT) of the structure using BE-TOX was designed to be the same as the conventional 3D NAND flash memory, and the channel potentials of the down coupling phenomenon (DCP) and natural local self-boosting (NLSB) effect were analyzed. As a result, the BE-TOX structure was confirmed to have a higher channel potential in the DCP a… Show more

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