Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH83 1999
DOI: 10.1109/ipfa.1999.791313
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Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

Jing-song Yue
1
,
W. K. Chim2,
B.J. Cho3
et al.
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