Channeling Energy Loss in Silicon by Using Numerical and Experimental Methods

Abstract

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 100 , 110 and 111 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.

Nuclear Energy Loss and Range of Heavy Ions in SiO2, LiF and Kapton Polyatomic Targets: A Monte Carlo study

“…The energy of the particle is reduced as a result of elastic collision. The target is considered amorphous with atoms at random locations and the directional properties applicable for a crystalline material are ignored [7].…”

“…It is thus the transferred energy which is responsible for the defects created. The transfers of the energy are divided on two parts: (i) the inelastic collisions constitute the principal mode of energy loss; it acted of exchange of loads between the projectile and target atoms, of an ionization of the target atoms or excitation of the electrons [13][14][15][16] and (ii) the elastic collisions result primarily by displacements of the target atoms and thus in crystalline defects in the structure [7]. The stopping power of heavy charged particles at low energy using the semi-thick target method is described in detail in the literature [17].…”

“…The energy loss of ions in amorphous targets has mainly been investigated mainly in the low, intermediate and high ion energy [1][2][3][4][5]. The binary collision approximation has long been used in slowing down simulations of the interactions of charged particles with target materials, as well as being the basis of large analytical theory in this area [6][7][8]. There is a long-standing of interest in stopping powers for heavy charged particles in matter, because such information is needed in many areas of basic and applied physics such as: Radiological physics and biomedical dosimetry [9].…”

Calculated Electronic Energy Loss of Heavy Ions at Low Energies in LR-115, Kapton, SiO2, and Al2O3 Amorphous Materials

“…Based on the previous work, through this study we propose the following equation to evaluate the electronic stopping power (S e ) LSS for heavy ions traversing the targets at low-energy region [17]. (S e ) Modified-LSS is given as (3).…”

“…The LSS theory was developed by Lindhard, Scharff, and Schiott [1] to calculate and evaluate the electronic energy loss at low energies. However, the deceleration and scattering of charged particle in matter is considerably used in several techniques and phenomenon of physics such as: ion channeling, radiation damage, sputtering, the reflection and transmission of charged particles, and charged particle activation analysis [2,3]. At low energies, the Bethe formula [4] cannot be used to calculate the electronic energy loss, because the inner-shell contribution to the energy loss is relatively negligible.…”