Channeling implants in silicon crystals

Articles you may be interested in Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in siliconA study of end-of-range ͑EOR͒ dislocation loops in silicon implanted with 50 keV 10 16 Si/cm 2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850°C and rapid thermal anneals at 1000°C. We observed the ripening for two types of EOR dislocation loops. They were faulted Frank dislocation loops and perfect prismatic dislocation loops. By separating their size distribution profiles, we found that their distribution profiles are different from that of conventional Ostwald ripening for precipitates. A long tail distribution profile was formed for perfect prismatic dislocation loops. We analyzed the distribution profiles and found that the size distribution profile of faulted Frank dislocation loops could be well fitted by a normal Gaussian probability function and that of perfect prismatic dislocation loops by a log-normal Gaussian probability function. Measurement of the total number of interstitials within both types of loops shows that the ripening of EOR dislocation loops is conservative. Knowing the size-distribution profiles of the EOR dislocation loops, it was possible to perform an analysis of the ripening behavior of the two types of dislocation loops.

Section: Introductionmentioning

confidence: 99%

Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon

Pan

Prussin

1997

“…To the best of our knowledge, we are the first to non-invasively image a pronounced diffusion of the phosphor ions along crystal directions which we attribute to axial channeling effects. This diffusive channeling is distinct from ion implantation channeling, [23][24][25] since it occurs after thermal annealing and, in particular, perpendicular to the implantation direction. The copper implantation field at the right side is hardly visible because of the fast copper diffusion during the annealing step.…”

Section: Resultsmentioning

confidence: 97%

Non-invasive nano-imaging of ion implanted and activated copper in silicon

Ballout

Samson

Schmidt

et al. 2011

Effects of hydrogen implantation temperature on ion-cut of siliconHigh-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The transprojected-range effect Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy, Raman microscopy, and scattering scanning near-field infrared microcscopy (s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy monitors the structural disorder within the implantation fields, the aforementionedinfrared techniques provide a detailed picture of the distribution of the free carriers. On a large scale (tens of micrometers), we visualized the channeling effects of phosphor dopants in silicon using FTIR microscopy. In comparison, using s-SNIM we were able to image, on a nanometer scale, local variations of the dielectric properties of the silicon substrate due to the activation of copper dopants.

“…In the figure it is also shown the TRIM simulation of the C concentration profile due to the implant. The profile is shown up to a depth of about 0.8 m, since at larger depths the shape of the profile is dominated by the channeling effect 20 which is not considered in the TRIM simulation. It is very important to note that in the surface region ͑up to a depth of 0.8 m͒ the TRIM profile is in good agreement with SIMS measurements performed on samples which were subjected to the same C implant and subsequent thermal process.…”

Section: Resultsmentioning

confidence: 99%

High temperature annealing effects on the electrical characteristics of C implanted Si

Lombardo

Cacciato

Larsen

et al. 1996

Self Cite

We have investigated the electrical characteristics of p ϩ -n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1ϫ10 15 cm Ϫ2 and annealed at 900 or 1100°C. In all cases cross-sectional transmission electron microscopy shows an excellent crystalline quality, with no extended defects, and the C-rich region is characterized by an n-type doping. In the material annealed at 900°C the C-rich region shows a low electron mobility and the presence of deep donor levels, and, as a consequence, the diode characteristics are nonideal. These effects can be attributed to the formation of C-Si self-interstitial-type complexes after the 900°C anneal. At 1100°C part of the C-Si complexes dissolve and the electrical characteristics of the materials noticeably improve.