Chaotic behaviours and control of chaos in the p–Ge photoconductor

Abstract

The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with different period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.