Chapter 1 Application Utilizing Bulk Negative Resistance

Copeland, J.A.; Knight, Stephen

doi:10.1016/s0080-8784(08)63006-9

Cited by 4 publications

(2 citation statements)

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“…field, %(x, t ) is the free-electron density, no is the net donor density in the active layer, -p(p>O) is the electric charge, e is the absolute permittivity of GaAs, J ( t ) is the space-independent total current density, v(E) is the electron drift velocity-electric field characteristic, and D ( E ) is the electron diffusion coefficientelectric field characteristic suggested by Copeland [13]. D o was increased to 400 cm2/s, short-circuit stability existed for doping levels down to 1 x 1015 cm+, and for 500 cmz/s down to the subcritically doped range where the device also is short-circuit stable [14], although the stability in this range does not stem from diffusion effects.…”

Section: A Numerical Resultsmentioning

confidence: 99%

“…Therefore, little error is introduced when evaluating the integral in (12) by assuming the 1inea.r variation 0 9 y 5 yv, (13) 111. THE LIMITING CASE In order to emphasize the simple physical idea underlying the mathematical treatment, this section is devoted to a simple case being at the verge of instability because the field in front of the domain equals the threshold field for negative differential mobility.…”

Section: E the Linear Electron Density Assumptionmentioning

confidence: 99%

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A simple analysis of the stable field profile in the supercritical TEA

Jeppesen

Jeppsson

1973

IEEE Trans. Electron Devices

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Abstracf-An analytical investigation supported by numerical calculations has been performed of the stable field profile in a supercritical diffusion-stabilized n-GaAs transferred electron amplifier (TEA) with ohmic contacts. In the numerical analysis, the field profile is determined by solving the steady-state continuity and Poisson equations. The diffusion-induced short-circuit stability is checked by performing time-domain computer simulations under constant voltage conditions. The analytical analysis based on simplifying assumptions gives the following results in good agreement with the numerical results. 1) A minimum doping level required for stability exists, which is inversely proportional to the field-independent diffusion coefficient assumed in the simple analysis.2) The dc current is bias independent and below the threshold value, and the current drop ratio increases slowly and almost linearly with the doping level. 3)The domain width normalized to the diode length L varies almost linearly with ( V~/ V~--l where VB is the bias voltage, VT is the threshold voltage, and no is the doping level. 4 ) The peak domain field varies almost linearly with (VB/ VT-l)t (n&)$. Those results contribute t o the understanding of the high nol-product switch and the stability of the supercritical TEA.

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Section: A Numerical Resultsmentioning

confidence: 99%

Section: E the Linear Electron Density Assumptionmentioning

confidence: 99%