Chapter 10 Free-Carrier Magnetooptical Effects

Palik, E. D.; Wright, George B.

doi:10.1016/s0080-8784(08)60322-1

Cited by 13 publications

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“…This was followed by a host of experiments including free-carrier absorption, Faraday rotation, Voigt effect and various magnetoplasma effects. A dozen or more ways of measuring effective masses were devised utilizing various schemes to measure amplitude and phase changes of an electromagnetic wave reflected or transmitted by a semiconductor (Lax and Mavroides 1960, Palik and Wright 1967.…”

Section: Introductionmentioning

confidence: 99%

“…Dependences on temperature and carrier density are both indicated by the data. The conduction band of InSb shown in figure33is constructed from a series of papers(Palik and Wright 1967) where nonparabolic effects have been studied by various experiments. The variation of effective mass with carrier density shown in figure34has been determined by a fit of experimental data by a Kane-type model (Kane 1957).…”

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Infrared and microwave magnetoplasma effects in semiconductors

1970

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Contents 1. Introduction . 2. Development of the dielectric tensor for a free-carrier magnetoplasma 2.1. Electrodynamic preliminaries . 2.2. The conductivity tensor. . 2.3. Choice of coordinates . 3.1. Wave propagation at an arbitrary angle to Bo 3.2. The Faraday configuration . 3.3. The Voigt configuration..3.4. Polarization for arbitrary 0 in other coordinate systems 4.1. Wave propagation in an unbounded medium 4.2. The infinite half-space . 4.3. The plane-parallel slab . 4.4. Mode interference phenomena: the Faraday and Voigt effects 4.5. Small samples and semiconductor powders 3. The dispersion equation E. D. Palik and J . K. Furdyna 10. Nonlocal effects . 10.1. General considerations . 10.2. Consequences of spatial dispersion: a qualitative view 10.3. Faraday geometry: a quantitative discussion . 10.4. The Voigt geometry: a quantitative discussion . 11 .l. Transverse magnetoconductivity in extrinsic narrow gap 11.2. Effect of orbital quantization on AlfvCn waves . 11.3, Miscellaneous comments Appendix Al. Interpretation of charge motion in a magnetoplasma . . A1 .l. Displacement coordinates in the Faraday geometry . A1.2. The plasmon and cyclotron oscillators Al.3. Coupled modes upon leaving the Faraday geometry . Al.4. Displacement coordinates in the Voigt geometry . Al.5. Magnetoplasmons with arbitrary direction of propagation . Al.6. Interpretation of zeroes in K ~, ~ A1.7. A point of view A2.1. The wave vector and the dielectric constant . A2.2. Energy density of radiation in a dispersive medium . A2.3. Phase velocity . A3. Kramers-Kronig analysis . A3.1. Dispersion relations for Bo = 0 A3.2. Dispersion relations for Bo#O A4. Magneto-optics of birefringent crystals .A4.1. The Bo = 0 case . A4.2. T h e BOZO case . AS.l. T h e Bo = 0 case .

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Infrared and microwave magnetoplasma effects in semiconductors

1970

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Volume Plasma Faraday Effect in n‐Type GaAs

Rheinländer

1976

Physica Status Solidi (b)

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The infrared Faraday rotation of transmitted light is measured on highly Sn-doped, n-type GaAs epitaxial layers in the spectral region of the plasma resonance a t temperatures of 300 and 130 K. The experimental results are explained applying the Drude theory. The statistical effect of the energy distribution of the electrons in the band is taken into consideration. The damping influence on the rotation is discussed in detail. The availability of the plasma rotation method for the determination of volume properties of epitaxial layers is pointed out.Die Infrarot-Faraday-Drehung wird in Transmission an stark Sn-dotierten, n-GaAsEpitaxieschichten im Spektralbereich der Plasmaresonanz bei Zimmertemperatur und bei 130 K gemessen. Die MeDergebnisse werden mit Hilfe der Drude-Theorie gedeutet. Der EinfluD der Energieverteilung der Elektronen im Leitungsband auf die Abhangigkeit der optischen DK von der Tragerrelaxationszeit wird berucksichtigt. Der DampfungseinfluD auf die Drehung im Resonanzbereich wird ausfuhrlich diskutiert. Es wird gezeigt, daD die Messung der Plasma-Faraday-Drehung eine brauchbare Methode zur Bestimmung von Volumeneigenschaften in hochdotierten Epitaxieschichten darstellt.

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On the determination of the free carrier relaxation time by transverse magneto‐plasma‐reflectivity measurements on Sn‐doped n‐type GaAs

Rheinländer

Haase

Weinert

1977

Physica Status Solidi (b)

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F r o m many investigations of the optical semiconductor properties due to free was found to be quite different from the carriers the optical relaxation time z dc relaxation time zdc /1 to 5/. This i s true in particular for ir plasma reflectivity effects /2 to 4/. In the manner used mostly the plasma frequency w and 5 be found from the reflectivity minimum with and without magnetic field and f r o m the line shape over a more or less broad part of the spectrum. However, because of the questionable validity of the Drude theory with a constant z value for including scattering of carriers, this method often yields erroneous 5 values. Therefore, the determination of z range. This condition can be fulfilled, for example, by measurements of the frequency o of the zero field reflectivity minimum and, if possible, of the resonance frequency w itself. In this note we report on this possibility using the transverse magneto-plasma reflectivity /6/.opt can P OPt opt should be reasonable only for a very small frequency OPt min P We have measured the reflectivity on n-type GaAs epitaxial layers doped with Sn in the infrared region with A, = (2 to 15) pm up to magnetic fields B = 2 . 8 T a t room temperature using a sensitive difference method /7/.In Fig. 1 some experimental spectra of the difference AR/R = (R(B) -R(O))/R(O) measured on GaAs samples at different magnetic fields are shown. The strong field dependence of the effect is clearly seen. However, the high-frequency zero point w does not depend ot? the magnetic field within the experiniental e r r o r . 0For comparison we have calculated AR/R applying the Drude theory / 6 / . Some theoretical AR/R spectra for indicating the damping influence a r e given in Fig. 1, too. In particular, the theoretical analysis has shown the very narrow neighborhood of w (plasma frequency) and w . In Fig. 2

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Chapter 10 Free-Carrier Magnetooptical Effects

Cited by 13 publications

References 71 publications

Infrared and microwave magnetoplasma effects in semiconductors

Infrared and microwave magnetoplasma effects in semiconductors

Volume Plasma Faraday Effect in n‐Type GaAs

On the determination of the free carrier relaxation time by transverse magneto‐plasma‐reflectivity measurements on Sn‐doped n‐type GaAs

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