Chapter 3 High-Brightness Nitride-Based Visible-Light-Emitting Diodes

Kern, R. S.; Götz, Werner; Chen, C.H.; Liu, H.; Fletcher, R. M.; Kuo, C. P.

doi:10.1016/s0080-8784(08)62489-8

Cited by 2 publications

(1 citation statement)

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“…While active regions with higher InN composition have a lower bandgap, the stronger spontaneous and piezoelectric polarization fields due to higher InN content in the InGaN alloy and the larger lattice mismatch between the QW and barrier material, respectively, lead to more pronounced energy barriers at the QW/barrier layer interfaces. However, proper device design leading to low series resistance in the n-and p-type device layers, formation of low contact resistance Ohmic contacts, and proper doping of the active region can result in AlInGaN LEDs with low V f [10]. The lower the V f , the higher the WPE of an LED with a given EQE (Eq.…”

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Performance of High-Power AlInGaN Light Emitting Diodes

Kim

Götz

Steigerwald

et al. 2001

phys. stat. sol. (a)

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114

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The performance of high-power AlInGaN light emitting diodes (LEDs) is characterized by light output-current-voltage (L-I-V) measurements for devices with peak emission wavelengths ranging from 428 to 545 nm. The highest external quantum efficiency (EQE) is measured for short wavelength LEDs (428 nm) at %29%. EQE decreases with increasing wavelength, reaching %13% at 527 nm. With low forward voltages ranging from %3.3 to %2.9 V at a drive current density of 50 A/cm 2 , these LEDs exhibit power conversion efficiencies ranging from %26% (428 nm) to %10% (527 nm).Introduction With recent improvements in AlInGaN materials and device quality, visible blue and green light emitting diodes (LEDs) based on the AlInGaN material system have reached power conversion efficiencies that have surpassed those of conventional light sources. These LEDs are approaching the efficiencies of modern halogen and compact fluorescent lamps [1]. Together with yellow and red AlInGaP-based LEDs, for which luminous efficiencies >100 lm/W (%610 nm) have been reported [2], AlInGaN LEDs have become the light source of choice for applications where low energy consumption and long life are required. General illumination based on "white" LEDs that use either AlInGaN LED-based phosphor conversion or a combination of red, green and blue (RGB) LED chips is rapidly emerging.The brightness or quality of an LED is often characterized by quoting the external quantum efficiency (EQE), which is given by

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