Chapter 3 Materials in Thin Film Electroluminescent Devices

Leskelä, Markku; Liu, Weimin; Ritala, Mikko

doi:10.1016/s0080-8784(08)62606-x

Cited by 15 publications

(9 citation statements)

References 199 publications

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“…For such an application, high-quality dielectric and luminescent films are required on large-area substrates. [2] ALD is still used today in the industrial production of TFEL displays.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

2003

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New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu to replace Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These materials must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required.

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“…For such an application, high-quality dielectric and luminescent films are required on large-area substrates. [2] ALD is still used today in the industrial production of TFEL displays.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

2003

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“…[9,10] Excellent conformality is required from many of the above mentioned thin films, especially from the high permittivity dielectrics and ferroelectrics, which show great promise for use in future generation dynamic random access memory (DRAM) and non-volatile ferroelectric memory, respectively.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of SrTiO3 Thin Films from a Novel Strontium Precursor-Strontium-bis(tri-isopropyl cyclopentadienyl)

Vehkamäki¹,

Hänninen

Ritala

et al. 2001

Chem. Vap. Deposition

117

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Strontium titanate thin films were grown by atomic layer deposition (ALD) at 250±325 C from the novel strontium compound, strontium bis(tri-isopropyl cyclopentadienyl), titanium tetraisopropoxide, and water. Though completely self-limiting, deposition of strontium could not be achieved because of some minor decomposition of the strontium compound. This decomposition was slow enough to ensure that good control of film stoichiometry was obtained by controlling either the (Sr-O)/ (Ti-O) pulsing ratio, or the strontium precursor exposure time. The films were polycrystalline and strongly oriented in the (100) direction. After annealing at 500 C in air, the films with the optimal composition were found to have measured permittivity values of around 180.

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“…Thin film electroluminescent displays (TFEL) (Figure 13) served as the original motivation for developing the ALD technology, including both chemistry and reactors (100)(101)(102)(103)(104). In the mid-1970s the concept of the TFEL display was known, but the existing thin film deposition methods did not allow their production in a reliable and cost-effective manner.…”

Section: Industrial Applicationsmentioning

confidence: 99%