Chapter 4 Electrical Properties of Mercuric Iodide

Bao, X. J.; Schlesinger, T. E.; James, R. B.

doi:10.1016/s0080-8784(08)62743-x

Cited by 16 publications

(7 citation statements)

References 84 publications

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“…2a, it can be seen that the photocurrent slowly increases for decreasing wavelengths close to the bandgap (or E > 1.26 eV), and shows a broad peak around 2.5eV. Similar photocurrent peaks are reported for other photoconductive materials in the past [28,29,30,31] and can be explained as follows. Initially, the photocurrent increases slowly and then starts to increase sharply from ∼ 2 eV till ∼ 2.66 eV.…”

Section: Resultssupporting

confidence: 74%

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Patil,

Wasala,

Ghosh

et al. 2021

Preprint

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Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of optoelectronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the bandgap energies E g (T ) of InSe at various temperatures. Our measurements indicate that room temperature E g value for InSe flake was ∼ 1.254 eV, which increased to a value of ∼ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E g as a function of T using several theoretical models is presented and discussed.

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Section: Resultssupporting

confidence: 74%

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Patil,

Wasala,

Ghosh

et al. 2021

Preprint

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“…The term "polarization" has been attributed with this phenomenon and has been used in the literature for several decades. A review of HgI 2 electronic properties can be found in the paper by Bao et al 3 Under an applied field, the resistance of HgI 2 devices changes with time and is due at least in part to the defect structure within the crystal. A variety of crystal defects are present in HgI 2 including, point defects, dislocations, X-defects 4 , and other extended defects.…”

Section: Introductionmentioning

confidence: 99%

Conduction characteristics in HgI 2 devices

Alexander

Holloway

Davidson

et al. 2005

Hard X-Ray and Gamma-Ray Detector Physics VII

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The performance of semiconductor radiation detectors is a function of electronic properties which are in turn related to crystallographic quality. In this paper we used devices from <100> and <110> growth regions of several different HgI 2 crystals grown by the PVD method. We measured I/V characteristics of HgI 2 devices over the range of +/-1000V. Voltages were ramped at different rates and at a range of temperatures (-70 o C to +20 o C) and the dark current decreased with temperature. Several devices exhibited negative differential resistance indicating field enhanced trapping and/or the formation of high-field domains. These devices exhibited NDR at both positive and negative voltages and it was observed that the current peak reduced with repeated cycling of positive bias indicating the reduction of carriers with time. After applying a negative bias, the current peak on the positive bias increased dramatically indicating that the traps were repopulated. These experimental results were modeled with several analytical expressions of conduction processes, considering both semiconductor and insulator models, e.g., FrenkelPoole, Schottky, and space-charge-limited emission, toward lending insight to mechanisms resulting in HgI 2 detector conditioning.

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“…[1][2][3] At room temperature, HgI 2 is found in its α phase with a tetragonal crystal structure. [1][2][3] At room temperature, HgI 2 is found in its α phase with a tetragonal crystal structure.…”

Section: Introductionmentioning

confidence: 99%

“…The solid line is a fit to equation(2) with Eg(0) = 2.32 eV, α = 9.6 × 10 −4 eV/K and β = 90 K. The left axis is the associated photon energy with the corresponding wavelengths indicated on the right axis.…”

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confidence: 99%

Color of red mercuric iodide at cryogenic temperatures

Hunt

Campi

Twamley

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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We investigated a red to yellow color change observed in α-HgI 2 when cooled below 150 K. A phase transformation to β-HgI 2 , which has a yellow color, was ruled out by a variable temperature x-ray diffraction study. Instead the color change at cryogenic temperatures is caused by a shift in the transmission edge to shorter wavelengths which we attribute to a widening band gap at low temperatures. Using optical transmission spectroscopy the width of the band gap was measured between 10 and 330 K. At room temperature the gap was 2.11 ± 0.03 eV which is significantly smaller than the most recently published values of ∼ 2.3 eV. This smaller band gap was further verified by measuring the thermoelectric current at elevated temperatures.

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Chapter 4 Electrical Properties of Mercuric Iodide

Cited by 16 publications

References 84 publications

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Conduction characteristics in HgI 2 devices

Color of red mercuric iodide at cryogenic temperatures

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