Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes

Kessler, M.; Ohrdes, Tobias; Wolpensinger, Bettina; Bock, Robert; Harder, Nils-P.

doi:10.1109/pvsc.2009.5411365

Cited by 27 publications

(22 citation statements)

References 10 publications

(13 reference statements)

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“…It is reported that the opentube liquid source BBr 3 diffusion induces the crystal defects and the carrier lifetime degradation due to the formation of BRL at the surface [7,20]. On the contrary, it is also reported that the formation of BRL improves the lifetime owing to metallic impurity gettering of BRL [21].…”

Section: Carrier Lifetime After Boron Diffusionmentioning

confidence: 99%

“…Thus, many boron diffusion processes have been proposed and used to fabricate the Ntype silicon solar cell. Open-tube liquid source diffusion of BBr 3 [7,8] must be a common industrial standard process but the number of process steps increases because of diffusion protection film formation on the opposite side. Ion implantation is the most advanced process and has precise controllability of the dopants [9].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Kurachi¹,

Yoshioka²

2016

International Journal of Photoenergy

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An atmospheric pressure chemical vapor deposition (AP-CVD) system has been newly developed for boron silicate glass (BSG) film deposition dedicating to solar cell manufacturing. Using the system, thermal boron diffusion from the BSG film is investigated and confirmed in terms of process stability for surface property before BSG deposition and BSG thickness. No degradation in carrier lifetime is also confirmed. A boron diffusion simulator has been newly developed and demonstrated for optimization of this process. Then, the boron thermal diffusion from AP-CVD BSG is considered to be the suitable method for N-type silicon solar cell manufacturing.

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Section: Carrier Lifetime After Boron Diffusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Kurachi¹,

Yoshioka²

2016

International Journal of Photoenergy

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“…Gaseous phase diffusion of boron using hazardous BBr 3 or BCl 3 liquid source, that needs extra safety precautions, leading to the increase of the process cost [4]. Alternative B-dopant sources have also been investigated to lower the cost involved in B diffusion.…”

Section: Introductionmentioning

confidence: 99%

Design of Solar Cells p⁺/n Emitter by Spin-On Technique

et al. 2017

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In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p + /n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N2/O2 gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910• C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5 × 10 20 atoms/cm 3 and 2.5 × 10 20 atoms/cm 3 , respectively. The junction depth was around 0.3 µm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 µm.

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“…The minority carrier lifetime of passivated N-type silicon wafer can reached ms level [1][2]. At present, the two most commercialized solar cells, Panasonic HIT cells and Sun-power IBC cells with high photoelectric conversion efficiency are all based on N type silicon substrate [3][4].Therefore, the preparation process of N-type silicon-based solar cells has attracted widespread attention of researchers in recent years [5].…”

Section: Introductionmentioning

confidence: 99%

Effects and methods of the BRL removal in solar cell

Jiang¹,

Dai²,

Tao³

et al. 2017

Proceedings of the 3rd Workshop on Advanced Research and Technology in Industry (WARTIA 2017)

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Boron diffusion is a conventional process in N-type silicon solar cells fabrication. The boron-rich layer (BRL) usually formed on the surface of silicon wafer in boron diffusion process, and the effective carrier lifetime can be sharply reduced by the BRL. In this paper, three methods were used to remove the BRL: high temperature nitric acid (HT-HNO 3 ) oxidation, chemical etching treatment (CET) and low temperature thermal oxidation (LTO). ECV and TEM are employed to characterized the dopant profiles and morphology of the silicon substrate surface after removing the BRL with different methods. Furthermore, the effective carrier lifetime of the samples is obtained by sinton instrument, and the reflectivity of the samples is measured. By analysis of the result date, we can conclude that the CET method can effectively remove the BRL and cause less carrier lifetime degradation comparing with other methods. What's more, the CET method have the most less influence on the doping profiles while removing the BRL. However, the CET method will cause a greater increase of the surface reflectivity than other methods.

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Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes

Cited by 27 publications

References 10 publications

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Design of Solar Cells p⁺/n Emitter by Spin-On Technique

Effects and methods of the BRL removal in solar cell

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Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes

Cited by 27 publications

References 10 publications

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Design of Solar Cells p+/n Emitter by Spin-On Technique

Effects and methods of the BRL removal in solar cell

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Product

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Design of Solar Cells p⁺/n Emitter by Spin-On Technique