Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

Battaglia, M.; Bisello, D.; Celestre, Richard; Contarato, Devis; Denes, P.; Mattiazzo, Serena; Tindall, C.

doi:10.1016/j.nima.2012.01.054

Cited by 12 publications

(11 citation statements)

References 13 publications

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“…The sensor under test is back-thinned using a commercial grinding technique [4] which has been already successfully employed for back-thinning CMOS Active Pixel Sensors [5]. The sensor thinning and post-processing are presented in detail in another paper, where we discuss the chip response to X-rays [6]. The thickness of the thinned chip is measured to be to (73 ± 2) µm.…”

Section: Thin Soi Sensor Experimental Setup and Data Analysismentioning

confidence: 99%

“…The pixels used in this study have a cell design with no p-type guard-ring and have the BPW connected to the pixel diode. The charge-to-voltage conversion of thinned and processed sensors is measured to be (31.3±0.4) e − ADC count −1 at 50 V, from their response to X-rays of various energies [6].…”

Section: Thin Soi Sensor Experimental Setup and Data Analysismentioning

confidence: 99%

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Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles

Battaglia¹,

Bisello²,

Contarato³

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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This paper presents the results of the characterisation of a thin fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors

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Section: Thin Soi Sensor Experimental Setup and Data Analysismentioning

confidence: 99%

Section: Thin Soi Sensor Experimental Setup and Data Analysismentioning

confidence: 99%

Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles

Battaglia¹,

Bisello²,

Contarato³

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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“…A latch-up mechanism, which destroys conventional bulk CMOS LSI, is absent [3]. SOI technology is developed in detector projects for many applications [4]- [7]. The SOI wafer is composed of a thick, high-resistivity substrate (sensing volume) and a thin low-resistivity Si layer (CMOS circuitry) sandwiching a buried oxide (BOX) layer [8].…”

Section: Introductionmentioning

confidence: 99%

Sense-Node Capacitance Reduction for SOI Pixel Sensor With Small Detection p-Well

2016

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A SOI pixel sensor with small detection p-well is researched and simulated to reduce the sense-node capacitance while maintaining a widespread collection area and uniform field within the sensing volume. In this pixel structure, two p-doped wells are adopted. A transfer-gate is employed to form a transport channel for charge carriers from one p-doped well to another when transfer-gate is on, or to isolate the two p-doped wells when transfer-gate is off. A fully-depleted buried p-well is formed for charge collection and storage, which is not connected to the readout electrode. Some key parameters have been studied. Numerical simulation results show that the proposed device can work effectively, but charge transfer efficiency is low for a small amount of charge, which needs a further improvement.Index Terms-SOI pixel sensor, transfer-gate, small detection p-well.

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“…In a limited number of examples tapered fiber-optic bundles have been used to couple the CCD to the scintillator with good results [20] but the alternative optical lens coupling has been adopted in the vast majority (> 95%) of instruments currently in use. Departures from these detection schemes have included an investigation of microchannel plates [22] and the adoption of a retarding electrostatic field for energy filtering [23].In other fields there have been significant advances in detectors directly exposed to the imaging beam for the detection of x rays [24,25] and medium energy electrons [26][27][28][29]. The current development of TEM instruments operating at lower accelerating voltages, largely driven by studies of radiation sensitive carbon-based materials [30], overlaps the detector requirements for EBSD.…”

mentioning

confidence: 99%

“…In other fields there have been significant advances in detectors directly exposed to the imaging beam for the detection of x rays [24,25] and medium energy electrons [26][27][28][29]. The current development of TEM instruments operating at lower accelerating voltages, largely driven by studies of radiation sensitive carbon-based materials [30], overlaps the detector requirements for EBSD.…”

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confidence: 99%

Direct Detection of Electron Backscatter Diffraction Patterns

et al. 2013

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We report the first use of direct detection for recording electron backscatter diffraction patterns. We demonstrate the following advantages of direct detection: the resolution in the patterns is such that higher order features are visible; patterns can be recorded at beam energies below those at which conventional detectors usefully operate; high precision in cross-correlation based pattern shift measurements needed for high resolution electron backscatter diffraction strain mapping can be obtained. We also show that the physics underlying direct detection is sufficiently well understood at low primary electron energies such that simulated patterns can be generated to verify our experimental data. DOI: 10.1103/PhysRevLett.111.065506 PACS numbers: 61.05.JÀ, 07.78.+s, 68.37.Hk Electron backscatter diffraction (EBSD) is a scanning electron microscope (SEM) based method in which diffraction of low-energy-loss electrons as they exit through the topmost few tens of nanometers leads to Kikuchi diffraction. In most EBSD studies the incident electron beam is stepped across a grid of points on the sample surface and the EBSD patterns analyzed in an automated way to determine crystal phase, orientation, or lattice strain variation. The EBSD method has evolved rapidly over the last two decades [1][2][3][4][5]. Most research has been directed to the application of this versatile tool to an ever increasing array of problems in materials characterization but the analysis methods themselves have also advanced, notably in three dimensional imaging using focused ion beam (FIB)-SEM [6-9] and in strain mapping [10][11][12][13][14]. However, the detector technology used to record EBSD patterns has essentially remained unchanged for over a decade and now limits performance in several application areas, such as strain resolution and low dose mapping, and prevents the development of new areas.The earliest EBSD patterns were recorded on film either exposed directly to the electrons in the chamber [15][16][17], or indirectly imaging a phosphor screen using a camera outside the vacuum [18]. Subsequently, these were replaced by various image intensified cameras giving the convenience of a live image of the pattern at the scintillator but with degraded pattern quality compared to that recorded using film [19]. Subsequently, scintillator coupled CCDs were introduced in the early 1990s [20,21]. In a limited number of examples tapered fiber-optic bundles have been used to couple the CCD to the scintillator with good results [20] but the alternative optical lens coupling has been adopted in the vast majority (> 95%) of instruments currently in use. Departures from these detection schemes have included an investigation of microchannel plates [22] and the adoption of a retarding electrostatic field for energy filtering [23].In other fields there have been significant advances in detectors directly exposed to the imaging beam for the detection of x rays [24,25] and medium energy electrons [26][27][28][29]. The current development of TEM instr...

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Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

Cited by 12 publications

References 13 publications

Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles

Characterisation of a thin fully depleted SOI pixel sensor with high momentum charged particles

Sense-Node Capacitance Reduction for SOI Pixel Sensor With Small Detection p-Well

Direct Detection of Electron Backscatter Diffraction Patterns

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