Characterisation of ar ion laser induced cvd silicon films: deposition, crystallographic texture and phosphorous doping

Roy, Susmita; Vengurlekar, A. S.; Karulkar, V. T.; Joshi, A. V.; Chandrasekhar, S.

doi:10.1007/bf02653358

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B Semiconductors1

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1988

1993

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Cited by 4 publications

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“…Direct laser writing of micron-dimension structures of polycrystalline and crystalline silicon by localized laser chemical vapor deposition of silane has been investigated by several groups. 24,136,[177][178][179][180][181][182][183][184][185][186][187][188][189] In most of these experiments, a visible line of the argon ion laser (such as 514.5 nm) is transmitted through the nonabsorbing silane gas and is focused onto an absorbing substrate.…”

Section: B Semiconductorsmentioning

confidence: 99%