Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Sanguino, P.; Niehus, M.; Melo, L.V.; Schwarz, R.; Koynov, S.; Monteiro, T.; Alves, H.; Meyer, B. K.

doi:10.1016/s0038-1101(02)00413-6

Cited by 16 publications

(7 citation statements)

References 23 publications

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“…Taking into account this fact, we measure the PL emission, at both points on the sample surface, as a function of temperature. Both sets of spectra show the PL evolution in the range from 10 to 300 K. As it can be seen, there is a dependence of the intensity and the position of the PL bands, as well as a quenching of the PL signal as expected 22 . Figure 4 shows the set of PL spectra obtained at the 1 st point.…”

Section: Resultssupporting

confidence: 52%

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

et al. 2019

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In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A 1 (LO), as reported for this material.

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Section: Resultssupporting

confidence: 52%

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

et al. 2019

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“…[21][22][23] However, the effect of a-Al 2 O 3 substrates' nitridation on the properties of GaN lms during PLD growth, as well as the growth mechanism of GaN on nitrided a-Al 2 O 3 substrates by PLD, lacks thorough study. [24][25][26][27] In this work, we investigate on the effect of a-Al 2 O 3 substrates nitridation on the properties of GaN lms grown by PLD systematically and propose the growth mechanism of GaN lms on nitrided a-Al 2 O 3 substrates by PLD. An effective approach to achieve high-quality GaN lms on a-Al 2 O 3 substrates by PLD is hence presented.…”

Section: Introductionmentioning

confidence: 99%

Nitridation effect of the α-Al₂O₃ substrates on the quality of the GaN films grown by pulsed laser deposition

et al. 2014

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“…The film was found to contain submicron size crystals with hexagonal shape. Sanguino et al [11] deposited GaN thin films on prenitridated c-plane sapphire at two substrate temperatures (600 ∘ C and 650 ∘ C) by cyclic pulsed laser deposition. Increase in the surface mobility 2 ISRN Materials Science for a better crystal growth was associated with increasing substrate temperature during deposition.…”

Section: Introductionmentioning

confidence: 99%

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

Ghosh

Hussain

Ghosh

et al. 2014

ISRN Materials Science

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Polycrystalline gallium nitride films were successfully deposited on fused silica substrates by ablating a GaN target using pulsed Nd-YAG laser. Microstructural studies indicated an increase in the average crystallite size from ~8 nm to ~70 nm with the increase in substrate temperature from 300 K to 873 K during deposition. The films deposited here were nearly stoichiometric. XPS studies indicated two strong peaks located at ~1116.6 eV and ~395 eV for Ga2p3/2 and a N1s core-level peak, respectively. The films deposited at substrate temperature above 573 K are predominantly zinc blende in nature. PL spectra of the films deposited at higher temperatures were dominated by a strong peak at ~3.2 eV. FTIR spectra indicated a strong and broad absorption peak centered ~520 cm−1 with two shoulders at ~570 cm−1 and 584 cm−1. Characteristic Raman peak at ~531 cm−1 for the A1(TO) mode is observed for all the films. Grain boundary trap states varied between 3.1×1015 and 7×1015 m−2, while barrier height at the grain boundaries varied between 12.4 meV and 37.14 meV. Stress in the films decreased with the increase in substrate temperature.

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Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Cited by 16 publications

References 23 publications

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Nitridation effect of the α-Al₂O₃ substrates on the quality of the GaN films grown by pulsed laser deposition

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

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Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Cited by 16 publications

References 23 publications

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

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Nitridation effect of the α-Al₂O₃ substrates on the quality of the GaN films grown by pulsed laser deposition