Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Lambertian and photonic light trapping analysis with thickness for GaAs solar cells based on 2D periodic pattern

“…However, the practical limitations [9, 10] encountered in these structure, could not allow these devices to achieve even half of the value suggested in [1]. Owing to the reason, during the past several years, several new LTS have been proposed for the efficiency enhancement for the thin film solar cells, ranges from using randomly roughened surfaces [11, 12] to plasmonic metallic structures [13] to ordered dielectric LTS designs (e.g. photonic crystals, PhC) [14–16].…”

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

“…This then results in the material absorbing at wavelengths longer than 870 nm, enhancing the solar cell absorption into the infrared range up to ~1000 nm. All material details are shown inTable 1.Double Crystal X-Ray Diffraction (DCXRD) measurements indicate excellent structural integrity with uniformly spaced narrow peaks demonstrating a good vertical correlation between layers[10].Proc. of SPIE Vol.…”