Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

Razykov, T. M.; Boltaev, Ganjaboy S.; Bosio, A.; Ergashev, B.; Kouchkarov, K.M.; Mamarasulov, N. K.; Mavlonov, Abdurashid; Romeo, Alessandro; Romeo, N.; Tursunkulov, Oybek; Yuldoshov, R. T.

doi:10.1016/j.solener.2017.11.053

Cited by 43 publications

(18 citation statements)

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“…Tin and selenium form tin(II) selenide (SnSe), also called stannous selenide, which is a p-type semiconductor, with both an indirect bandgap at 0.90 eV and a direct bandgap at 1.30 eV (Lefebvre et al, 1998). It is receiving increasing attention for potential applications in low-cost PV, as it is an easy processable two-dimensional layered material (Wang et al, 2016; Jeong et al, 2017; Razykov et al, 2018; Ul Haq et al, 2018). fabricated SnSe thin films by chemical molecular beam deposition, using synthesized polycrystalline SnSe as precursors: XRD analysis proves that SnSe films can be grown in the orthorhombic crystalline structure.…”

Section: Emerging Earth-abundant Chalcogenide Pv Absorbersmentioning

confidence: 99%

New Earth-Abundant Thin Film Solar Cells Based on Chalcogenides

2019

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At the end of 2017 roughly 1.8% of the worldwide electricity came from solar photovoltaics (PV), which is foreseen to have a key role in all major future energy scenarios with an installed capacity around 5 TW by 2050. Despite silicon solar cells currently rule the PV market, the extremely more versatile thin film-based devices (mainly Cu(In,Ga)Se 2 and CdTe ones) have almost matched them in performance and present room for improvement. The low availability of some elements in the present commercially available PV technologies and the recent strong fall of silicon module price below 1 $/W p focused the attention of the scientific community on cheap earth-abundant materials. In this framework, thin film solar cells based on Cu 2 ZnSnS 4 (CZTS) and the related sulfur selenium alloy Cu 2 ZnSn(S,Se) 4 (CZTSSe) were strongly investigated in the last 10 years. More recently, chalcogenide PV absorbers potentially able to face TW range applications better than CZTS and CZTSSe due to the higher abundance of their constituting elements are getting considerable attention. They are based on both MY 2 (where M = Fe, Cu, Sn and Y = S and/or Se) and Cu 2 XSnY 4 (where X = Fe, Mn, Ni, Ba, Co, Cd and Y = S and/or Se) chalcogenides. In this work, an extensive review of emerging earth-abundant thin film solar cells based on both MY 2 and Cu 2 XSnY 4 species is given, along with some considerations on the abundance and annual production of their constituting elements.

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Section: Emerging Earth-abundant Chalcogenide Pv Absorbersmentioning

confidence: 99%

New Earth-Abundant Thin Film Solar Cells Based on Chalcogenides

2019

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“…Pnma) селенида олова (рис. 4, 2) [12,36,37], причем наблюдается преимущественная ориентация кристаллитов в плоскости {111}. Дифракционные рефлексы с малыми кристаллографическими индексами SnSe на рентгенограмме отсутствуют в связи с небольшой толщиной слоя.…”

Section: результаты и обсуждениеunclassified

“…Проведенное уточнение параметров кристаллической решетки SnSe с использованием программного продукта FullProf показало значение a = (11.481 ± 0.005) ¦ , b = (4.155 ± 0.005) ¦ , c = (4.437 ± 0.005) ¦ , которые хорошо согласуются с литературными данными [12,39,40].…”

Section: результаты и обсуждениеunclassified

“…Значения оптической ширины запрещенной зоны для прямых межзонных переходов тонкопленочных слоев SnSe, изучаемых в настоящей работе, согласуется с данными работ [12,17,18,47], где представлены результаты исследования пленок селенида олова (II), полученных как химическим осаждением из водных сред, так и вакуумным испарением.…”

Section: результаты и обсуждениеunclassified

“…Физические характеристики тонкопленочного селенида олова (II), т. е. величина оптической запрещенной зоны, направление и степень ориентации преимущественного роста кристаллитов, элементный состав, в значительной степени зависят от метода получения. Исследовательские работы последнего десятилетия по синтезу монооксида олова проводили в основном физическими методами, включающими термическое испарение [10,11], молекулярно-лучевое осаждение (CMBD) [3,12], метод реактивного испарения [13]. Однако разработка химического метода осаждения пленок SnSe, предполагающего простоту ведения процесса, исключающего использование дорогостоящего оборудования, высоких температур и давлений, а также обеспечивающего ведение синтеза в относительно " мягких" условиях из коллоидно-химических сред, открывает значительную перспективу получения наноструктурированных слоев селенида олова [14][15][16][17][18].…”

Section: Introductionunclassified

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Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

Маскаева¹,

Федорова²,

Марков³

et al. 2019

Физика И Техника Полупроводников

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High adhesion tin monoselenide SnSe layers with a thickness of up to 200 ± 10 nm have been prepared by hydrochemical deposition from a trilonate reaction mixture. It was revealed by the X-ray diffraction method that the synthesized films crystallize in the orthorhombic system (S. G. Pnma). The presence of a significant amount of oxygen in the surface layers of the films is explained by partial oxidation of the samples with the formation of the SnO2 phase. The results of ion etching to a depth of 18 nm showed a sharp decrease in the oxygen content with depth and actual correspondence of the elemental composition to SnSe. According to the results of optical studies, the band gap was found to be 1.69 eV for direct type of transitions, respectively. The synthesized SnSe layers have a hole-type conductivity typical of this material.

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Free‐Standing Single‐Walled Carbon Nanotube/SnSe Nanosheet/Poly(3,4‐Ethylenedioxythiophene):Poly(4‐Styrenesulfonate) Nanocomposite Films for Flexible Thermoelectric Power Generators

Liu

Meng

et al. 2020

Adv Eng Mater

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The flexible thermoelectric (TE) cooling and energy harvesting devices made of p-and n-type TE materials have great potential for the applications in wearable and portable electronics, as they can directly realize mutual conversion between thermal energy and electrical energy without mechanical moving parts or toxic liquids; [1-4] Recently, flexible TE materials have evoked researchers' great interest, and many efforts have been made to improve their TE properties, which is estimated by the figure-of-merit value, ZT ¼ S 2 σT/κ (κ, T, σ, and S are the thermal conductivity, absolute temperature, electrical conductivity, and Seebeck coefficient, respectively). [2,4] Conducting polymers have good flexibility and process ability, which are suitable for preparation of flexible TE materials; [5,6] however, the TE properties of conducting polymers are still much lower when compared with traditional inorganic TE materials. [5] It is an effective approach to improve the conducting polymers' TE performance by preparation of inorganic/conducting polymer composites via a suitable process. [1,7] The most frequently used methods for preparation of inorganic/polymer composites are consisting of the solution mixing, [8] mechanical blending, [9] spin-coating, [10] drop-casting, [11] in situ polymerization, [12] gas-phase polymerization, [13] vacuum filtration, [14] 3D printing, [15] etc. As one of the most promising conducting polymers, poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS), has many advantages, e.g., water solubility, commercial availability, mechanical flexibility, and low intrinsic thermal conductivity. [14,16,17] PEDOT:PSS has, therefore, been commonly used as matrixes for preparation of inorganic/conducting polymer composites. [5] The morphologies of inorganic fillers, such as nanoparticles (NPs), nanosheets (NSs), nanowires (NWs), have significantly affected their dispersibility in conducting polymer matrix and TE properties of the as-prepared composites. [14,18,19] BiTe based alloy NSs, Sn-Se based alloy NSs, and MoS 2 NSs, etc., after exfoliation for their corresponding particles, can be dispersed in a suitable solvent, e.g., ethanol, N-methyl-2-pyrrolidone, or N, N-dimethylformamide.

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Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

Cited by 43 publications

References 20 publications

New Earth-Abundant Thin Film Solar Cells Based on Chalcogenides

New Earth-Abundant Thin Film Solar Cells Based on Chalcogenides

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

Free‐Standing Single‐Walled Carbon Nanotube/SnSe Nanosheet/Poly(3,4‐Ethylenedioxythiophene):Poly(4‐Styrenesulfonate) Nanocomposite Films for Flexible Thermoelectric Power Generators

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