Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Filali, Walid; Sengouga, Nouredine; Oussalah, Slimane; Mari, Riaz Hussain; Jameel, Dler; Saqri, Noor Alhuda Al; Aziz, Mohsin; Taylor, David; Henini, M.

doi:10.1016/j.spmi.2017.07.059

Cited by 25 publications

(24 citation statements)

References 30 publications

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“…3 that, by rising temperature, the current value is also increased. This indicates a usual thermal activation phenomenon [13,16,18] . The obtained experimental (I-V) characteristics were used to extract the main Schottky diode parameters (n, Rs , Is ,Φb).…”

Section: Resultsmentioning

confidence: 84%

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Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Garoudja¹,

Filali²,

Oussalah³

et al. 2020

J. Semicond.

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In this work, forward current voltage characteristics for multi quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature range from 100 to 300K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential Evolution (DE), Particle Swarm Optimization (PSO) and Artificial Bee Colony (ABC) have been chosen as candidate heuristics algorithms. While, Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

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Section: Resultsmentioning

confidence: 84%

“…In this work, a Multi-Quantum Wells (MQWs) GaAs/Al0.33Ga0.67As Schottky diode, fabricated at Nottingham University (school of physics and astronomy applied) [16,17] , has been utilized to test the effectiveness of the developed methods.…”

Section: Methodsmentioning

confidence: 99%

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Garoudja¹,

Filali²,

Oussalah³

et al. 2020

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this work, sample referenced by NU1054 was fabricated at Nottingham University [7,8]. It is n-type Silicon doped GaAs/AlGaAs multi quantum wells Schottky diode.…”

Section: Methodsmentioning

confidence: 99%

“…The elaboration of this type of microelectronic devices requires different steps, which is called fabrication process, starting from the growth of the substrate, than the deposition of various semiconductors and buffer layers. After that, the metallization phase is achieved by creating Schottky or ohmic contacts [7,8]. Finally, the electrical characterization of the fabricated device is afterward established.…”

Section: Introductionmentioning

confidence: 99%

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer

et al. 2019

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We report the capacitance-voltage (C-V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices. The elaboration process and the characterization phase have been carried out at Nottingham University. The C-V characteristics have been measured at different temperature ranging from 20K to 400K. The barrier height and effective density were than extracted from 1/(C/A) 2 plot using heuristic algorithm which called ALO (Ant Lion Optimizer).the accuracy of the extraction method is verified through the gotten results.

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“…Electrical characterization was considered as an indispensable phase, for instance current-voltage (I-V) and capacitancevoltage (C-V) characteristics were used to extract the main SBD parameters. However, I-V measurements of Schottky diodes at room temperature do not give sufficient information about the conduction mechanism and barrier formation nature at MS interface [12]. Thereby, many researchers have been interested in the investigation of temperature effects on I-V and C-V characteristics by determining the SBD parameters.…”

Section: Introductionmentioning

confidence: 99%

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Filali

Amrani

Garoudja

et al. 2021

Superlattices and Microstructures

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Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Cited by 25 publications

References 30 publications

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

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