“…In contrast, the non-vacuum-based combustion chemical vapour deposition (CCVD) process is a very cost effective deposition technique and hence makes it a lucrative method for metal and/or metal oxide deposition. 16 By changing the CCVD parameters, the film morphology can be easily controlled in surface roughness, surface area and porosity. Accordingly, ultrathin SiO x layers on glass substrates were deposited under varied conditions (substrate temperature, burner passes and substrate velocity) creating a barrier against glass leaching.…”
Section: Introductionmentioning
confidence: 99%
“…Accordingly, ultrathin SiO x layers on glass substrates were deposited under varied conditions (substrate temperature, burner passes and substrate velocity) creating a barrier against glass leaching. 16 Similarly prepared silicon dioxide layers provide an alternative to conventional surface treatment for reactive metals, Schinkinger et al investigated CCVD nanoscaled SiO 2 films on zinc-coated steel as an interface between an organic coating and the metal substrate. 17 Moreover, thin ZnO layers have been deposited by CCVD using non-volatile zinc nitrate as metal oxide source.…”
Complexes [M(O2CCH2OC2H4OMe)2] (M = Co, Mn) were synthesized characterised regarding their thermal behaviour. They were used as precursors for deposition of rough Co3O4and smooth Mn2O3/Mn3O4thin filmsviathe CCVD process.
“…In contrast, the non-vacuum-based combustion chemical vapour deposition (CCVD) process is a very cost effective deposition technique and hence makes it a lucrative method for metal and/or metal oxide deposition. 16 By changing the CCVD parameters, the film morphology can be easily controlled in surface roughness, surface area and porosity. Accordingly, ultrathin SiO x layers on glass substrates were deposited under varied conditions (substrate temperature, burner passes and substrate velocity) creating a barrier against glass leaching.…”
Section: Introductionmentioning
confidence: 99%
“…Accordingly, ultrathin SiO x layers on glass substrates were deposited under varied conditions (substrate temperature, burner passes and substrate velocity) creating a barrier against glass leaching. 16 Similarly prepared silicon dioxide layers provide an alternative to conventional surface treatment for reactive metals, Schinkinger et al investigated CCVD nanoscaled SiO 2 films on zinc-coated steel as an interface between an organic coating and the metal substrate. 17 Moreover, thin ZnO layers have been deposited by CCVD using non-volatile zinc nitrate as metal oxide source.…”
Complexes [M(O2CCH2OC2H4OMe)2] (M = Co, Mn) were synthesized characterised regarding their thermal behaviour. They were used as precursors for deposition of rough Co3O4and smooth Mn2O3/Mn3O4thin filmsviathe CCVD process.
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