Characterising superstrate CIS solar cells with electron beam induced current

Rechid, J.; Kampmann, Andreas; Reineke‐Koch, Rolf

doi:10.1016/s0040-6090(99)00793-2

Cited by 23 publications

(26 citation statements)

References 8 publications

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“…(1) is determined from Monte-Carlo simulations. 16,17 It depends on the average is the open-circuit voltage, j SC the short-circuit current density, FF the fill factor, and g the power-conversion efficiency.…”

Section: Theoretical Detailsmentioning

confidence: 99%

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

Kavalakkatt

Abou‐Ras

Haarstrich

et al. 2014

Journal of Applied Physics

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The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se 2 (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at R3 GBs. Across non-R3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-R3 GBs always differently. This complex situation was found in various CIGSe thin films with) ratios. A part of the EBIC profiles exhibiting reduced signals across non-R3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs. V C 2014 AIP Publishing LLC.

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Section: Theoretical Detailsmentioning

confidence: 99%

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

Kavalakkatt

Abou‐Ras

Haarstrich

et al. 2014

Journal of Applied Physics

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“…For charge carrier generation in EBIC, an electron beam generation profile according to the equations given in Ref. 26 was used. The basic set of parameters for a CISe solar cell (denoted as standard) is listed in Table I …”

Section: Numerical Simulationsmentioning

confidence: 99%

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

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“…Several approaches have been published [48,[51][52][53], which estimate the extension R of the interaction volume of an electron beam with a compound, considerations which are relevant for all electron-beam-related techniques (see also Chapter 12). In SEM-EDX, the value R represents an intuitive and reliable limit for the spatial resolution.…”

Section: Spatial Resolutionsmentioning

confidence: 99%

Elemental Distribution Profiling of Thin Films for Solar Cells

Hoffmann

Klemm

Efimova

et al. 2011

Advanced Characterization Techniques for Thin Film Solar Cells

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The present chapter will give an overview about the techniques glow discharge-optical emission (GD-OES) and glow discharge-mass spectroscopy (GD-MS), secondary ion mass spectroscopy (SIMS) and sputtered neutral mass spectroscopy (SNMS), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS), which are methods broadly available for depth-resolved information about the matrix and trace element concentrations in multilayer stacks as those used for thin-film solar cells. In addition, also energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope may be applied on fractured cross-section specimens of these multilayer stacks, providing a quick way of analyzing the spatial distribution of the matrix elements, which is why this technique is also included in this chapter.AES, XPS, SIMS, and SNMS have a good lateral resolution, and depth-resolved information may be obtained by the investigation either of cross-section specimens or (most simply) of a fractured surface (see Section 16.6.3.1). All of these methods are in general performed in combination with a sputtering process when aiming for depth-resolved elemental distribution analysis. Thereby, ions are accelerated toward the surface of the sample and collide with the atoms in the region near the surface. The resulting collision cascade leads to the emission of sample material from the surface and forms a more or less flat crater. While AES and XPS only use this process to expose the region of interest, SIMS and SNMS analyze the sputtered material. Because of practical reasons, different sputtering rates are employed at times, that is, fast sputtering for removing sample material and slow sputtering during the analysis.XPS, AES, and SIMS work under ultrahigh vacuum conditions and must be performed at high-acceleration voltages in order to obtain high sputtering yields. These techniques make use of a scanning ion beam for sputtering, which allows the discrimination of crater edge effects. For the SIMS analysis, only an electronically gated area is used for the analysis. Similarly, in AES and XPS measurements, only

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Characterising superstrate CIS solar cells with electron beam induced current

Cited by 23 publications

References 8 publications

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Elemental Distribution Profiling of Thin Films for Solar Cells

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