1998
DOI: 10.1080/00150199808220249
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Characteristic behaviour of non-stationary shorted photocurrent in Sn2P2S6 films in the phase transition region

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Cited by 7 publications
(2 citation statements)
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“…The experimentally dened energy gap of the SPS crystals is equal to 2.35 eV at room temperature and 2.50 eV at low temperatures. 54,55 In the study of Glukhov et al, 37 the energy gap of the SPS crystal calculated via the DFT/LDA method implemented in the ABINIT soware was determined to be much lower than the abovementioned experimental values (PE E g $1.58 eV, FE E g $1.63 eV). A similar result with the indirect band gap equal to 0.9 eV was achieved by Caracas and Gonze via applying the LDA approximation.…”
Section: Electronic Properties Of the Sn 2 P 2 S 6 Crystalmentioning
confidence: 91%
“…The experimentally dened energy gap of the SPS crystals is equal to 2.35 eV at room temperature and 2.50 eV at low temperatures. 54,55 In the study of Glukhov et al, 37 the energy gap of the SPS crystal calculated via the DFT/LDA method implemented in the ABINIT soware was determined to be much lower than the abovementioned experimental values (PE E g $1.58 eV, FE E g $1.63 eV). A similar result with the indirect band gap equal to 0.9 eV was achieved by Caracas and Gonze via applying the LDA approximation.…”
Section: Electronic Properties Of the Sn 2 P 2 S 6 Crystalmentioning
confidence: 91%
“…1 Earlier, we reported on the transient photocurrents arising in Sn 2 P 2 S 6 films under extrinsic and intrinsic light excitation (hν ≥ E g and hν < E g , E g = 2.4 eV, bandgap energy). [2][3][4] It was demonstrated that illumination of Sn 2 P 2 S 6 films in the absence of an external electric field is accompanied by a turn-on transient current pulse with relaxation. The same effect is observed for the pyroelectric response.…”
Section: Introductionmentioning
confidence: 99%